IRFH8334PbF

IRFH8334PbF VDS VGS max 30 ± 20 9.0 13.5 7.1 25 V V mΩ nC A HEXFET® Power MOSFET RDS(on) max (@VGS = 10V) (@VGS = 4.5V) Qg typ. ID (@Tc(Bottom) = 25°C) i PQFN 5X6 mm Applications Control MOSFET for high frequency buck converters Features and Benefits Features Low Thermal Resistance to PCB (< 4.1°C/W) Low Profile (<1.2mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Benefits Enable better thermal dissipation results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability O rderable part number Package T ype IRFH8334T RP BF IRFH8334 TR2PBF PQ FN 5m m x 6m m PQ FN 5mm x 6mm Standard Pack Form Q uantity Tape an d Reel 4000 Tape and Reel 400 Note EO L notice #259 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current Power Dissipation Max. 30 ± 20 14 12 44 28 Units V g Power Dissipation g c hi hi 25i 100 3.2 30 A W W/°C °C Linear Derating Factor Operating Junction ...