TFG1200

ADVANCE INFO TFG1200 200V High-Side / Low-Side eGaN Gate Driver Features Description      Floating high-side driver in bootstrap operation to 200V  1.2A/5A peak source/sink current  0.4Ω/2Ω pull down/pull up impedance  Internal bootstrap supply voltage clamped to 5.2V  Independent high-side and low-side logic inputs  Proprietary bootstrap capacitor auto-recharge technology  Fast propagation delays (25ns typical)  Separate source and sink outputs Applications The TFG1200 is a high-side/low-side gate driver uniquely designed to drive enhancement mode Gallium Nitride (eGaN) FETs. The TFG1200 provides the special requirements of an eGaN FET driver: supply clamping, low pull-up and pull-down impedance, and high peak currents all within a single IC. A higher sink capability maintains the gate drive line at a low level during the fast dv/dt of the eGaN FET without unintended turn on of the FET. Fast propagation delays, fast rise times, and a proprietary bootstrap capacitor auto-recharge allow higher switching frequencies allowing smaller component footprints; and with the integrated bootstrap diode the required area compared to a discrete solution is greatly reduced.  High Speed DC-DC Conversion  Hard Switched and High Frequency Power Supplies  Class D Audio TDFN-10 Typical Application Ordering Information Year Week Lot Lot PART NUMBER (NOTE1) PACKAGE MARK top botm TFG1200-NBX TDFN-10 YWLL TBD NOTE1 REPLACE X with P for 180 mm Tape & Reel Packing (Qty ...