SGP07N120
SGP07
Fast IGBT in NPT-technology
• lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • ...
Description
SGP07
Fast IGBT in NPT-technology
lower Eoff compared to previous generation Short circuit withstand time – 10 µs Designed for: - Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
1
N120
C
G
E
PG-TO-220-3-1
Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGP07N120 1200 Maximum Ratings Parameter S Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 8A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s T j , T stg -55...+150 260 °C
2
VCE V
IC 8A
Eoff 0.7mJ
Tj M 150°C
arking
Package
GP07N120 PG-TO-220-3-1
ymbol VCE IC
Value 1200 16.5 7.9
Unit V A
ICpul s V GE EAS tSC Ptot
27 27 ±20 40 10 125 W V mJ µs
VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C
1 2
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.3 Sep 07
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Power Semiconductors
SGP07
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junct...
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