Document
TK7A65D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK7A65D
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 0.8 Ω(typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Ф3.2 ± 0.2 10 ± 0.3
A
Unit: mm
2.7 ± 0.2
3.9 3.0 15.0 ± 0.3
1.14 ± 0.15
2.8 MAX. 13 ± 0.5
Absolute Maximum Ratings (Ta = 25°C)
0.69 ± 0.15 Ф0.2 M A
2.6 ± 0.1 4.5 ± 0.2
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
Rating
650 ±30
7 28 45
273
7 4.5 150 −55 to 150
Unit V V
A
W mJ A mJ °C °C
2.54 2.54 123
0.64 ± 0.15
1: Gate 2: Drain 3: Source
JEDEC
⎯
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient
Symbol
Rth (ch-c) Rth (ch-a)
Max
2.78 62.5
Unit
°C/W °C/W
Note 1:Ensure that the channel temperature does not exceed 150℃. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 9.86mH, RG = 25 Ω, IAR = 7 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.
1
2 3
Start of commercial production
2009-07 1 2013-11-01
Electrical Characteristics (Ta = 25°C)
TK7A65D
Characteristics
Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance
Rise time
Switching time
Turn-on time Fall time
Turn-off time
Total gate charge Gate-source charge Gate-drain charge
Symbol
Test Condition
Min
IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss
VGS = ±30 V, VDS = 0 V VDS = 650 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 3.5 A VDS = 10 V, ID = 3.5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
⎯ ⎯ 650 2.0 ⎯ 1.1 ⎯ ⎯
⎯
tr
10 V
ID = 3.5 A VOUT
⎯
VGS
0V
ton
50 Ω
RL = 57 Ω ⎯
tf
VDD ≈ 200 V toff Duty ≤ 1%, tw = 10 μs
⎯
⎯
Qg ⎯
Qgs VDD ≈ .