Document
CAT24WC01/02/04/08/16
1K/2K/4K/8K/16K-Bit Serial E2PROM FEATURES
s 400 KHZ I C Bus Compatible* s 1.8 to 6.0Volt Operation s Low Power CMOS Technology s Write Protect Feature
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s Self-Timed Write Cycle with Auto-Clear s 1,000,000 Program/Erase Cycles s 100 Year Data Retention s 8-pin DIP, 8-pin SOIC or 8 pin TSSOP s Commercial, Industrial and Automotive
— Entire Array Protected When WP at VIH
s Page Write Buffer
Temperature Ranges
DESCRIPTION
The CAT24WC01/02/04/08/16 is a 1K/2K/4K/8K/16Kbit Serial CMOS E2PROM internally organized as 128/ 256/512/1024/2048 words of 8 bits each. Catalyst’s advanced CMOS technology substantially reduces device power requirements. The the CAT24WC01/02/04/ 08/16 feature a 16-byte page write buffer. The device operates via the I2C bus serial interface, has a special write protection feature, and is available in 8-pin DIP, 8pin SOIC or 8-pin TSSOP.
PIN CONFIGURATION
DIP Package (P)
A0 A1 A2 VSS 1 2 3 4 8 7 6 5 VCC WP SCL SDA
BLOCK DIAGRAM
SOIC Package (J)
EXTERNAL LOAD
A0 A1 A2 VSS
1 2 3 4
8 7 6 5
VCC WP SCL SDA
5020 FHD F01
DOUT ACK VCC VSS WORD ADDRESS BUFFERS
SENSE AMPS SHIFT REGISTERS
COLUMN DECODERS
TSSOP Package (U)
(* Available for 24WC01 and 24WC02 only)
SDA
START/STOP LOGIC
A0 A1 A2 VSS
1 2 3 4
8 7 6 5
VCC WP SCL SDA
XDEC WP CONTROL LOGIC
E2PROM
PIN FUNCTIONS
Pin Name A0, A1, A2 SDA SCL WP VCC VSS Function Device Address Inputs Serial Data/Address Serial Clock Write Protect +1.8V to +6.0V Power Supply Ground
SCL A0 A1 A2 STATE COUNTERS SLAVE ADDRESS COMPARATORS
24WCXX F03
DATA IN STORAGE
HIGH VOLTAGE/ TIMING CONTROL
* Catalyst Semiconductor is licensed by Philips Corporation to carry the I2C Bus Protocol.
© 1999 by Catalyst Semiconductor, Inc. Characteristics subject to change without notice
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Doc. No. 25051-00 3/98
S-1
CAT24WC01/02/04/08/16
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ................. –55°C to +125°C Storage Temperature ....................... –65°C to +150°C Voltage on Any Pin with Respect to Ground(1) ........... –2.0V to +VCC + 2.0V VCC with Respect to Ground ............... –2.0V to +7.0V Package Power Dissipation Capability (Ta = 25°C) .................................. 1.0W Lead Soldering Temperature (10 secs) ............ 300°C Output Short Circuit Current(2) ........................ 100mA RELIABILITY CHARACTERISTICS Symbol NEND(3) TDR
(3)
*COMMENT
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.
Parameter Endurance Data Retention ESD Susceptibility Latch-up
Min. 1,000,000 100 2000 100
Max.
Units Cycles/Byte Years Volts mA
Reference Test Method MIL-STD-883, Test Method 1033 MIL-STD-883, Test Meth.