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SiHLU024 Dataheets PDF



Part Number SiHLU024
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet SiHLU024 DatasheetSiHLU024 Datasheet (PDF)

IRLR024, IRLU024, SiHLR024, SiHLU024 www.vishay.com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5.0 V 18 4.5 12 Single D FEATURES 60 0.10 • Dynamic dV/dt Rating • Surface Mount (IRLR024, SiHLR024) • Straight Lead (IRLU024, SiHLU024) • Available in Tape and Reel • Logic-Level Gate Drive •R DS(on) Specified at VGS = 4 V and 5 V • Fast Switching • Material categorizati on: For definitions of c ompliance please see www.vi.

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IRLR024, IRLU024, SiHLR024, SiHLU024 www.vishay.com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5.0 V 18 4.5 12 Single D FEATURES 60 0.10 • Dynamic dV/dt Rating • Surface Mount (IRLR024, SiHLR024) • Straight Lead (IRLU024, SiHLU024) • Available in Tape and Reel • Logic-Level Gate Drive •R DS(on) Specified at VGS = 4 V and 5 V • Fast Switching • Material categorizati on: For definitions of c ompliance please see www.vishay.com/doc?99912 DPAK (TO-252) D D IPAK (TO-251) DESCRIPTION G G S G D S S N-Channel MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combi nation of fas t swit ching, ruggedized d evice design, low on-resistance and cost-effectiveness. The DPAK is d esigned for surface mount ing using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU , S iHLU series) i s for t hrough-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. DPAK (TO-252) IRLR024PbF SiHLR024-E3 DPAK (TO-252) SiHLR024TRL-GE3 DPAK (TO-252) SiHLR024TR-GE3 IRLR024TRPbFa SiHLR024T-E3a IPAK (TO-251) SiHLU024-GE3 IRLU024PbF SiHLU024-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER S Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s TC = 25 °C TA = 25 °C EAS PD dV/dt 4 TJ, Tstg VGS at 5.0 V TC = 25 °C TC = 100 °C YMBOL VDS VGS ± ID IDM 56 0.33 0.020 91 42 2.5 .5 - 55 to + 150 260 W/°C mJ W V/ns °C LIMIT 60 10 14 9.2 A UNIT V Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 541 μH, Rg = 25 , IAS = 14 A (see fig. 12). c. ISD  17 A, dI/dt  140 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). S13-0164-Rev. D, 04-Feb-13 Document Number: 91322 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 http://www.Datasheet4U.com IRLR024, IRLU024, SiHLR024, SiHLU024 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER S Maximum Junction-to-Ambient Maximum Junction-to-Ambient (PCB Mount)a Maximum Junction-to-Case (Drain) YMBOL RthJA RthJA RthJC MIN. -TYP. MAX. 110 50 3.0 °C/W UNIT Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS (TJ = 25 °C, unless otherwise.


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