IRLR024, IRLU024, SiHLR024, SiHLU024
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5.0 V 18 4.5 12 Single
D
FEATURES
60 0.10
• Dynamic dV/dt Rating • Surface Mount (IRLR024, SiHLR024) • Straight Lead (IRLU024, SiHLU024) • Available in Tape and Reel • Logic-Level Gate Drive •R DS(on) Specified at VGS = 4 V and 5 V • Fast Switching • Material categorizati on: For definitions of c ompliance please see www.vishay.com/doc?99912
DPAK (TO-252)
D D
IPAK (TO-251)
DESCRIPTION
G
G
S G
D S
S N-Channel MOSFET
Third generation power MOSFETs from Vishay provide the designer with the best combi nation of fas t swit ching, ruggedized d evice design, low on-resistance and cost-effectiveness. The DPAK is d esigned for surface mount ing using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU , S iHLU series) i s for t hrough-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. DPAK (TO-252) IRLR024PbF SiHLR024-E3 DPAK (TO-252) SiHLR024TRL-GE3 DPAK (TO-252) SiHLR024TR-GE3 IRLR024TRPbFa SiHLR024T-E3a IPAK (TO-251) SiHLU024-GE3 IRLU024PbF SiHLU024-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER S Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s TC = 25 °C TA = 25 °C EAS PD dV/dt 4 TJ, Tstg VGS at 5.0 V TC = 25 °C TC = 100 °C YMBOL VDS VGS ± ID IDM 56 0.33 0.020 91 42 2.5 .5 - 55 to + 150 260 W/°C mJ W V/ns °C LIMIT 60 10 14 9.2 A UNIT V
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 541 μH, Rg = 25 , IAS = 14 A (see fig. 12). c. ISD 17 A, dI/dt 140 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). S13-0164-Rev. D, 04-Feb-13 Document Number: 91322 1 For technical questions, contact:
[email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
http://www.Datasheet4U.com
IRLR024, IRLU024, SiHLR024, SiHLU024
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER S Maximum Junction-to-Ambient Maximum Junction-to-Ambient (PCB Mount)a Maximum Junction-to-Case (Drain) YMBOL RthJA RthJA RthJC MIN. -TYP. MAX. 110 50 3.0 °C/W UNIT
Note a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise.