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MDT-160 Dataheets PDF



Part Number MDT-160
Manufacturers ELECTROVIPRYAMITEL
Logo ELECTROVIPRYAMITEL
Description PHASE CONTROL THYRISTOR
Datasheet MDT-160 DatasheetMDT-160 Datasheet (PDF)

JOINT-STOCK COMPANY «ELECTROVIPRYAMITEL» P H A S E C O N T R O L T H Y R I S T O R - D I O D E www.elvpr.ru M O D U L E S MTT-160, MTTC-160, MTTA-160 MTD-160, MTDC-160, MTDA-160 MDT-160, MDTC-160, MDTA-160 ♦ VDRM/VRRM = 400 - 1600 V ♦ IT(AV) = 160 A (TC = 85 °C) ♦ ITSM = 5 kA (TVj = 125 °C) ♦ Heat transfer through AlN ceramic isolated metal baseplate ♦ Presspack construction 5 ♦ High reliability at thermal cycles (10 at ∆TC = 70 ºC) ♦ Case width 34 mm MAXIMUM RATED VALUES Parameter and con.

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JOINT-STOCK COMPANY «ELECTROVIPRYAMITEL» P H A S E C O N T R O L T H Y R I S T O R - D I O D E www.elvpr.ru M O D U L E S MTT-160, MTTC-160, MTTA-160 MTD-160, MTDC-160, MTDA-160 MDT-160, MDTC-160, MDTA-160 ♦ VDRM/VRRM = 400 - 1600 V ♦ IT(AV) = 160 A (TC = 85 °C) ♦ ITSM = 5 kA (TVj = 125 °C) ♦ Heat transfer through AlN ceramic isolated metal baseplate ♦ Presspack construction 5 ♦ High reliability at thermal cycles (10 at ∆TC = 70 ºC) ♦ Case width 34 mm MAXIMUM RATED VALUES Parameter and conditions Symbol Values min. typ. max. Units Repetitive peak off-state voltage / Repetitive peak reverse voltage, TVj = - 60 °C…+ 125 °C Non-repetitive peak off-state voltage/Non- repetitive peak reverse voltage, TVj = - 60 °C…+ 125 °C Repetitive peak off-state current/ Repetitive peak reverse current, TVj = 125 °C, VD / VR = VDRM / VRRM Max. average on-state current, f = 50 Hz, double side cooled, TC = 85 °C RMS on-state current Surge non-repetitive current, VR = 0, TVj = 125 °C, tp = 10 ms Safety factor Critical rate of rise of on-state current, V = 0,67VDRM , IT = 320 A, IFG = 1 A, tr = 1 µs, f = 50 Hz, TVj =125 °C Critical rate of rise of off-state voltage VD = 0,67VDRM, TVj = 125 °C Gate power loss, DC Operation junction temperature range Storage temperature range VDRM / VRRM 400 - 1600 V VDSM / VRSM 500 - 1700 IDRM / IRRM - - 25 mA IT(AV) IRMS ITSM I2t (diT/dt)crit (dVD/dt)crit 500 PGM TVj Tstg - 60 - 60 - 160 250 5 125 320 1000 4 + 125 + 50 A kA kA2s A/µs V/µs W °C 18/06/2007 MTT-160, MTTC-160, MTTA-160 MTD-160, MTDC-160, MTDA-160 MDT-160, MDTC-160, MDTA-160 page 1 http://www.Datasheet4U.com JOINT-STOCK COMPANY «ELECTROVIPRYAMITEL» MTT-160, MTTC-160, MTTA-160 MTD-160, MTDC-160, MTDA-160 MDT-160, MDTC-160, MDTA-160 ELECTRICAL CHARACTERISTICS Maximum peak on-state voltage, IT = 502 A, TVj = 25 °C On-state threshold voltage, TVj = 125 °C, IT = 200 - 800 A On-state slope resistance, TVj = 125 °C, IT = 200 - 800 A Delay time, V = 0,67VDRM , IT = 160 A, IFG = 1 A, tr = 1 µs, TVj = 25 °C Circuit-commutated turn off-time, IT = 160 A, diT/dt = - 5 A/µs, VR ≥ 100 V, VD = 0,67VDRM, (dVD/dt) = 50 V/µs, TVj = 125 °C Recovery charge, diT/dt = - 5 A/µs, TVj = 125 °C, IT = 160 A, VR ≥ 100 V Holding current, VD =12 V, TVj = 25 °C Gate trigger voltage, VD = 12 V, VTM V(TO) rT td ----- www.elvpr.ru 1,50 V 1,00 1,05 1,0 µs mΩ tq -- 150 Qrr -- 300 µAs IH -- 200 mA TVj = - 60 °C TVj = 25 °C TVj = 125 °C VGT -- 4,5 2,5 2,0 V Gate trigger current, VD = 12 V, TVj = - 60 °C TVj = 25 °C TVj = 125 °C IGT -- 350 200 150 3600/3000 mA Gate non-trigger voltage, VD = 0,67VDRM, TVj = 125 °C Gate non-trigger current, VD = 0,67VDRM, TVj = 125 °C Insulation test voltage (RMS), f = 50 Hz, t = 1sec/1min VGD IGD 10 Visol 0,25 - V mA V -- 18/06/2007 MTT-160, MTTC-160, MTTA-160 MTD-160, MTDC-160, MTDA-160 MDT-160, MDTC-160, MDTA-160 page 2 JOINT-STOCK COMPANY «ELECTROVIPRYAMITEL» MTT-160, MTTC-160, MTTA-160 MTD-160, MTDC-160, MTDA-160 MDT-160, MDTC-160, MDTA-160 THERMAL PARAMETERS Thermal resistance junction to case, per thyristor (diode) per module Thermal resistance case to heatsink, per thyristor (diode) per module Rthjc -- www.elvpr.ru 0,170 0,085 0,10 0,05 °C/W Rthch - MECHANICAL PARAMETERS Weight w Terminal connection torque Heatsink mounting torque Maximum acceleration (at nominal mounting force) Mt Ms a440,5 6 6 50 kg Nm Nm m/s2 18/06/2007 MTT-160, MTTC-160, MTTA-160 MTD-160, MTDC-160, MTDA-160 MDT-160, MDTC-160, MDTA-160 page 3 JOINT-STOCK COMPANY «ELECTROVIPRYAMITEL» MTT-160, MTTC-160, MTTA-160 MTD-160, MTDC-160, MTDA-160 MDT-160, MDTC-160, MDTA-160 www.elvpr.ru Fig. 1. Maximum on-state characteristics (Limit device, 10 ms, half sine) On-state characteristics model VT = A + B·IT + C·ln(IT + 1) + D· IT Valid for IT = 50 – 900 A B 0.0007 C 0.065 D 0.0049 9 763 0.0007297 0.067 -0.003767 TVj = 125 ºC TVj = 25 ºC A 0.638 0.802 18/06/2007 MTT-160, MTTC-160, MTTA-160 MTD-160, MTDC-160, MTDA-160 MDT-160, MDTC-160, MDTA-160 page 4 JOINT-STOCK COMPANY «ELECTROVIPRYAMITEL» MTT-160, MTTC-160, MTTA-160 MTD-160, MTDC-160, MTDA-160 MDT-160, MDTC-160, MDTA-160 www.elvpr.ru Fig. 2. Transient thermal impedance junction to case ( DC ) 18/06/2007 MTT-160, MTTC-160, MTTA-160 MTD-160, MTDC-160, MTDA-160 MDT-160, MDTC-160, MDTA-160 page 5 JOINT-STOCK COMPANY «ELECTROVIPRYAMITEL» MTT-160, MTTC-160, MTTA-160 MTD-160, MTDC-160, MTDA-160 MDT-160, MDTC-160, MDTA-160 www.elvpr.ru Fig. 3. Maximum peak gate power losses Position at fig. 3 11 22 3 20 4 40 5 200 Duty cycle, D = f·tp Gate pulse length, tp, ms DC 10 1,0 0,5 0,1 Maximum gate pulse power PGM, W 4 7 15 25 75 18/06/2007 MTT-160, MTTC-160, MTTA-160 MTD-160, MTDC-160, MTDA-160 MDT-160, MDTC-160, MDTA-160 page 6 JOINT-STOCK COMPANY «ELECTROVIPRYAMITEL» MTT-160, MTTC-160, MTTA-160 MTD-160, MTDC-160, MTDA-160 MDT-160, MDTC-160, MDTA-160 www.elvpr.ru Fig. 4. On-state power loss vs. on-state current (sine) Fig. 5. On-state powe.


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