Document
JOINT-STOCK COMPANY
«ELECTROVIPRYAMITEL»
P H A S E C O N T R O L T H Y R I S T O R - D I O D E
www.elvpr.ru
M O D U L E S
MTT-160, MTTC-160, MTTA-160 MTD-160, MTDC-160, MTDA-160 MDT-160, MDTC-160, MDTA-160
♦ VDRM/VRRM = 400 - 1600 V ♦ IT(AV) = 160 A (TC = 85 °C) ♦ ITSM = 5 kA (TVj = 125 °C)
♦ Heat transfer through AlN ceramic isolated metal baseplate ♦ Presspack construction 5 ♦ High reliability at thermal cycles (10 at ∆TC = 70 ºC)
♦ Case width 34 mm
MAXIMUM RATED VALUES
Parameter and conditions Symbol Values min. typ. max. Units
Repetitive peak off-state voltage / Repetitive peak reverse voltage, TVj = - 60 °C…+ 125 °C Non-repetitive peak off-state voltage/Non- repetitive peak reverse voltage, TVj = - 60 °C…+ 125 °C Repetitive peak off-state current/ Repetitive peak reverse current, TVj = 125 °C, VD / VR = VDRM / VRRM Max. average on-state current, f = 50 Hz, double side cooled, TC = 85 °C RMS on-state current Surge non-repetitive current, VR = 0, TVj = 125 °C, tp = 10 ms Safety factor Critical rate of rise of on-state current, V = 0,67VDRM , IT = 320 A, IFG = 1 A, tr = 1 µs, f = 50 Hz, TVj =125 °C Critical rate of rise of off-state voltage VD = 0,67VDRM, TVj = 125 °C Gate power loss, DC Operation junction temperature range Storage temperature range
VDRM / VRRM
400 -
1600 V
VDSM / VRSM
500
-
1700
IDRM / IRRM
-
-
25
mA
IT(AV) IRMS ITSM I2t (diT/dt)crit (dVD/dt)crit 500 PGM TVj Tstg - 60 - 60 -
160 250 5 125 320 1000 4 + 125 + 50
A
kA kA2s A/µs V/µs W °C
18/06/2007
MTT-160, MTTC-160, MTTA-160 MTD-160, MTDC-160, MTDA-160 MDT-160, MDTC-160, MDTA-160
page 1
http://www.Datasheet4U.com
JOINT-STOCK COMPANY
«ELECTROVIPRYAMITEL» MTT-160, MTTC-160, MTTA-160 MTD-160, MTDC-160, MTDA-160 MDT-160, MDTC-160, MDTA-160
ELECTRICAL CHARACTERISTICS
Maximum peak on-state voltage, IT = 502 A, TVj = 25 °C On-state threshold voltage, TVj = 125 °C, IT = 200 - 800 A On-state slope resistance, TVj = 125 °C, IT = 200 - 800 A Delay time, V = 0,67VDRM , IT = 160 A, IFG = 1 A, tr = 1 µs, TVj = 25 °C Circuit-commutated turn off-time, IT = 160 A, diT/dt = - 5 A/µs, VR ≥ 100 V, VD = 0,67VDRM, (dVD/dt) = 50 V/µs, TVj = 125 °C Recovery charge, diT/dt = - 5 A/µs, TVj = 125 °C, IT = 160 A, VR ≥ 100 V Holding current, VD =12 V, TVj = 25 °C Gate trigger voltage, VD = 12 V, VTM V(TO) rT td -----
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1,50 V 1,00 1,05 1,0 µs mΩ
tq
--
150
Qrr
--
300
µAs
IH
--
200
mA
TVj = - 60 °C TVj = 25 °C TVj = 125 °C
VGT
--
4,5 2,5 2,0
V
Gate trigger current, VD = 12 V,
TVj = - 60 °C TVj = 25 °C TVj = 125 °C
IGT
--
350 200 150 3600/3000
mA
Gate non-trigger voltage, VD = 0,67VDRM, TVj = 125 °C Gate non-trigger current, VD = 0,67VDRM, TVj = 125 °C Insulation test voltage (RMS), f = 50 Hz, t = 1sec/1min
VGD IGD 10 Visol
0,25 -
V mA V
--
18/06/2007
MTT-160, MTTC-160, MTTA-160 MTD-160, MTDC-160, MTDA-160 MDT-160, MDTC-160, MDTA-160
page 2
JOINT-STOCK COMPANY
«ELECTROVIPRYAMITEL» MTT-160, MTTC-160, MTTA-160 MTD-160, MTDC-160, MTDA-160 MDT-160, MDTC-160, MDTA-160
THERMAL PARAMETERS
Thermal resistance junction to case, per thyristor (diode) per module Thermal resistance case to heatsink, per thyristor (diode) per module Rthjc --
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0,170 0,085 0,10 0,05
°C/W
Rthch -
MECHANICAL PARAMETERS
Weight w Terminal connection torque Heatsink mounting torque Maximum acceleration (at nominal mounting force) Mt Ms a440,5 6 6 50 kg Nm Nm m/s2
18/06/2007
MTT-160, MTTC-160, MTTA-160 MTD-160, MTDC-160, MTDA-160 MDT-160, MDTC-160, MDTA-160
page 3
JOINT-STOCK COMPANY
«ELECTROVIPRYAMITEL» MTT-160, MTTC-160, MTTA-160 MTD-160, MTDC-160, MTDA-160 MDT-160, MDTC-160, MDTA-160
www.elvpr.ru
Fig. 1. Maximum on-state characteristics (Limit device, 10 ms, half sine) On-state characteristics model VT = A + B·IT + C·ln(IT + 1) + D· IT Valid for IT = 50 – 900 A B 0.0007 C 0.065 D 0.0049 9 763 0.0007297 0.067 -0.003767
TVj = 125 ºC TVj = 25 ºC
A 0.638 0.802
18/06/2007
MTT-160, MTTC-160, MTTA-160 MTD-160, MTDC-160, MTDA-160 MDT-160, MDTC-160, MDTA-160
page 4
JOINT-STOCK COMPANY
«ELECTROVIPRYAMITEL» MTT-160, MTTC-160, MTTA-160 MTD-160, MTDC-160, MTDA-160 MDT-160, MDTC-160, MDTA-160
www.elvpr.ru
Fig. 2. Transient thermal impedance junction to case ( DC )
18/06/2007
MTT-160, MTTC-160, MTTA-160 MTD-160, MTDC-160, MTDA-160 MDT-160, MDTC-160, MDTA-160
page 5
JOINT-STOCK COMPANY
«ELECTROVIPRYAMITEL» MTT-160, MTTC-160, MTTA-160 MTD-160, MTDC-160, MTDA-160 MDT-160, MDTC-160, MDTA-160
www.elvpr.ru
Fig. 3. Maximum peak gate power losses
Position at fig. 3 11 22 3 20 4 40 5 200
Duty cycle, D = f·tp
Gate pulse length, tp, ms DC 10 1,0 0,5 0,1
Maximum gate pulse power PGM, W 4 7 15 25 75
18/06/2007
MTT-160, MTTC-160, MTTA-160 MTD-160, MTDC-160, MTDA-160 MDT-160, MDTC-160, MDTA-160
page 6
JOINT-STOCK COMPANY
«ELECTROVIPRYAMITEL» MTT-160, MTTC-160, MTTA-160 MTD-160, MTDC-160, MTDA-160 MDT-160, MDTC-160, MDTA-160
www.elvpr.ru
Fig. 4. On-state power loss vs. on-state current (sine)
Fig. 5. On-state powe.