70N20 FDA70N20 Datasheet

70N20 Datasheet, PDF, Equivalent


Part Number

70N20

Description

FDA70N20

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
Datasheet
Download 70N20 Datasheet


70N20
FDA70N20
N-Channel UniFETTM MOSFET
200 V, 70 A, 35
Features
• RDS(on) = 35 mΩ (Max.) @ VGS = 10 V, ID = 35 A
• Low Gate Charge (Typ. 66 nC)
Low Crss (Typ. 89 pF)
• 100% Avalanche Tested
Applications
• Uninterruptible Power Supply
• AC-DC Power Supply
December 2013
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
G
D
S
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate Above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
G
S
FDA70N20
200
70
45
280
±30
1742
70
41.7
4.5
417
3.3
-55 to +150
300
FDA70N20
0.3
0.24
40
©2005 Fairchild Semiconductor Corporation
FDA70N20 Rev C1
1
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
www.fairchildsemi.com
http://www.Datasheet4U.com

70N20
Package Marking and Ordering Information
Part Number
FDA70N20
Top Mark
FDA70N20
Package
TO-3PN
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0V, ID = 250µA
ID = 250µA, Referenced to 25°C-
VDS = 200V, VGS = 0V
VDS = 160V, TC = 125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
200
-
--
--
--
--
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250µA3
VGS = 10V, ID = 35A
.0
--
gFS Forward Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 40V, ID = 35A
VDS = 25V, VGS = 0V,
f = 1.0 MHz
--
--
--
--
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 100V, ID = 70A
RG = 25
VDS = 160V, ID = 70A
VGS = 10V
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4)
(Note 4)
--
--
--
--
--
--
--
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 70A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 70A
dIF/dt =100A/µs
--
--
--
--
--
NOTES:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 0.533 mH, IAS = 70 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3.ISD 70 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
Typ.
--
0.2
--
--
--
--
--
0.029
47
3050
750
89
71
235
65
39
66
19
26
--
--
--
175
4.1
Max. Unit
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
5.0
0.035
--
V
S
3970
980
130
pF
pF
pF
150 ns
480 ns
140 ns
88 ns
86 nC
-- nC
-- nC
70 A
280 A
1.4 V
-- ns
-- µC
©2005 Fairchild Semiconductor Corporation
FDA70N20 Rev C1
2
www.fairchildsemi.com


Features FDA70N20 — N-Channel UniFETTM MOSFET December 2013 FDA70N20 N-Channel UniF ETTM MOSFET 200 V, 70 A, 35 mΩ Feature s • RDS(on) = 35 mΩ (Max.) @ VGS = 1 0 V, ID = 35 A • Low Gate Charge (Typ . 66 nC) • Low Crss (Typ. 89 pF) • 100% Avalanche Tested Description UniF ETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Thi s MOSFET is tailored to reduce on-state resistance, and to provide better swit ching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor corre ction (PFC), flat panel display (FPD) T V power, ATX and electronic lamp ballas ts. Applications • Uninterruptible P ower Supply • AC-DC Power Supply D G G D S TO-3PN S TC = 25°C unless oth erwise noted. Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv /dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Parameter - Continuous (TC = 25°.
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