SMK0825F
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATIONS Features
• • • • High Voltage : BVDSS=250V(Min.) L...
SMK0825F
Advanced N-Ch Power MOSFET
SWITCHING
REGULATOR APPLICATIONS Features
High Voltage : BVDSS=250V(Min.) Low Crss : Crss=33pF(Typ.) Low gate charge : Qg=14.5nC(Typ.) Low RDS(on) : RDS(on)=0.43Ω(Max.)
G Package Code TO-220F-3L GD S TO-220F-3L
PIN Connection
D
Ordering Information
Type No. Marking SMK0825F SMK0825
S
Marking Diagram
Column 1 : Manufacturer
AUK AUK GYMDD YMDD Δ SMK0825 SDB20D45
Column 2 : Production Information e .g.) GYMDD -. G : Factory management code -. YMDD : Date Code (year, month, date) Column 3 : Device Code
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic Symbol
Drain-source voltage Gate-source voltage Drain current (DC) * I Drain current (Pulsed) Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature ② ② ① ①
* D
Rating
VDSS VGSS TC=25℃ TC=100℃ IDM PD 29 IAS 8 EAS 356 IAR 8 EAR 7.4 TJ Tstg 150 -55~150 250 ±30 8 5.2 32
Unit
V V A A A W A mJ A mJ °C
Characteristic Symbol
Thermal resistance Junction-case R Junction-ambient
th(J-C)
Typ.
Rth(J-A)
Max.
4.31 62.5
Unit
℃/W
KSD-T0O040-001
1
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SMK0825F
Electrical Characteristics (TC=25°C unless otherwise noted)
Characteristic Symbol
Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward tr...