AON7520

AON7520 30V N-Channel AlphaMOS General Description Latest Trench Power AlphaMOS (αMOS LV) technology Very Low RDS(ON) at 2.5V VGS Low Gate Charge ESD protection RoHS and Halogen-Free Compliant Product Summary V DS ID (at VGS=10V) 30V 50A < 1.8mΩ < 2.1mΩ < 3.1mΩ HBM Class 2 RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) Typical ESD protection Application Load switch, battery switch in portable devices 100% UIS Tested 100% R g Tested Top View DFN 3.3x3.3 EP Bottom View Top View 1 2 3 4 D 8 7 6 5 G Pin 1 S C unless otherwise noted Absolute Maximum Ratings TA=25° Symbo Parameter l Parameter mbol Sy Drain-Source Voltage VDS Maximum Maximum 30 Units V Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current C Continuous Drain Current Avalanche Current VDS Spike Power Dissipation B Power Dissipation A C C VGS C TC=25° TC=100° C C TA=25° TA=70° C ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG 100ns TC=25° C TC=100° C TA=25° C TA=70° C ±12 50 39 200 48 38 60 90 36 83.3 33.3 6.2 4 -55 to 150 V A A A mJ V W W ° C Avalanche energy L=0.05mH Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 16 45 1.1 Max 20 55 1.5 Units ° C/W ° C/W ° C/W Rev.1.0: May 2013 www.aosmd.com Page 1 of 6 http://www.Datasheet4U.com AON7520 C unless otherwise noted) Electrical Charact...