AON7532E

AON7532E 30V N-Channel AlphaMOS General Description Latest Trench Power AlphaMOS (αMOS LV) technology Very Low RDS(ON) at 4.5V VGS Low Gate Charge ESD protection RoHS and Halogen-Free Compliant Product Summary V DS ID (at VGS=10V) 30V 28A < 3.5mΩ < 5.5mΩ HBM Class 2 RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection Application DC/DC Converters 100% UIS Tested 100% R g Tested Top View DFN 3x3 EP Bottom View Top View 1 2 3 4 D 8 7 6 5 G Pin 1 S C unless otherwise noted Absolute Maximum Ratings TA=25° Parameter Symbol Drai n-Source Voltage rain-Source D VDS DS Gate-Source Voltage VGS C TC=25° Continuous Drain ID C TC=100° CurrentG Maximum 30 ±20 28 21 112 30.5 24 45 51 36 28 11 5 3.2 -55 to 150 Units V V A Pulsed Drain Current C Continuous Drain Current Avalanche Current VDS Spike Power Dissipation B Power Dissipation A C IDM TA=25° C TA=70° C IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG 100ns TC=25° C TC=100° C TA=25° C TA=70° C A A mJ V W W ° C Avalanche energy L=0.05mH C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 20 45 3.6 Max 25 55 4.4 Units ° C/W ° C/W ° C/W Rev.1.0 August 2013 www.aosmd.com Page 1 of 6 http://www.Datasheet4U.com AON7532E C unless otherwise noted) Electrical Characteristics (TJ=25° Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VG...