30V N-Channel MOSFET
AON7538
30V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(o...
Description
AON7538
30V N-Channel AlphaMOS
General Description
Latest Trench Power AlphaMOS (αMOS LV) technology Very Low RDS(on) at 4.5V VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant
Product Summary
VDS ID (at VGS=10V)
30V 30A < 5.1mΩ < 8.2mΩ
RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V)
Application
DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested 100% Rg Tested
Top View
DFN 3x3 EP Bottom View
1 2 3 4
Top View
8 7 6 5
D
G S
Pin 1
C unless otherwise noted Absolute Maximum Ratings TA=25° Parameter Symbol Drain-Source Voltage VDS Gate-Source te-Source Voltage
VGS GS
Maximum 30
±20 ±20 30
Units V
V
Continuous Drain CurrentG Pulsed Drain Current C Continuous Drain Current Avalanche Current VDS Spike Power Dissipation B Power Dissipation A
C
TC=25° C TC=100° C TA=25° C TA=70° C
ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG
23 120 23 18 40 8 36 24 9 4.2 2.6 -55 to 150
A
A A mJ V W W ° C
Avalanche energy L=0.01mH C 100ns TC=25° C TC=100° C C TA=25° TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJC
Typ 24 47 4.2
Max 30 60 5.2
Units ° C/W ° C/W ° C/W
Rev.1.0: August 2013
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AON7538
C unless otherwise noted) Electrical Characteristics (TJ=25° S...
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