25MT060WF

Target Data 05/01 25MT060WF "FULL-BRIDGE" IGBT MTP Warp Speed IGBT Features Gen. 4 Warp Speed IGBT Technology HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery Very Low Conduction and Switching Losses Optional SMT Thermystor Inside Aluminum Nitride DBC Very Low Stray Inductance Design for High Speed Operation VCES = 600V VCE(on) typ. = 2.2V @ VGE = 15V, IC = 25A TC = 25°C Benefits Optimized for Welding, UPS and SMPS Applications Operating Frequencies > 20 kHz Hard Switching, >200 kHz Resonant Mode Low EMI, requires Less Snubbing Direct Mounting to Heatsink PCB Solderable Terminals Very Low Junction-to-Case Thermal Resistance Absolute Maximum Ratings Parameters V CES IC ICM ILM I F Max 600 @ TC = 25°C @ TC = 100°C 50 25 200 200 @ TC = 100°C 25 200 ± 20 2500 900 400 @ TC = 25°C @ TC = 100°C Units V A Collector-to-Emitter Voltage Continuos Collector Current Pulsed Collector Current Peak Switching Current Diode Continuous Forward Current Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal to Case, t = 1 min Maximum Power Dissipation IFM VGE V ISOL PD V W 1 25MT060WF Target Data 05/01 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters V(BR)CES V CE(on) V GE(th) ∆ V GE(th) / ∆TJ g fe I CES V FM I GES Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Collector-to-Emit...