Si7431DP

Si7431DP Vishay Siliconix P-Channel 200 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 200 RDS(on) ()I 0.174 at VGS = - 10 V 0.180 at VGS = - 6 V D FEATURES (A) Qg (Typ.) 88 - 3.8 - 3.6 PowerPAK SO-8 Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs Ultra-Low On-Resistance Critical for Application Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile 100 % Rg and Avalanche Tested Compliant to RoHS Directive 2002/95/EC 6.15 mm S 1 2 3 S S 5.15 mm APPLICATIONS Active Clamp in Intermediate DC/DC Power Supplies G S G 4 D 8 7 6 5 D D D Bottom View Ordering Information: Si7431DP-T1-E3 (Lead (Pb)-free) Si7431DP-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150°C)a Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c a Symbol VDS VGS TA = 25 °C TA = 70 °C ID IDM IS L = 0.1 mH TA = 25 °C TA = 70 °C IAS EAS PD TJ, Tstg 10 s Steady State - 200 ± 20 Unit V - 3.8 - 3.0 - 30 - 4.2 - 30 45 5.4 3.4 - 55 to 150 260 - 2.2 - 1.8 A - 1.6 mJ 1.9 1.2 W °C THERMAL RESISTANCE RATINGS Parameter Symb Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) t  10 s Steady State...