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STF30NM50N Dataheets PDF



Part Number STF30NM50N
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Power MOSFET
Datasheet STF30NM50N DatasheetSTF30NM50N Datasheet (PDF)

STB30NM50N,STI30NM50N,STF30NM50N STP30NM50N, STW30NM50N N-channel 500 V, 0.090 Ω, 27 A MDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features 3 1 l TO-247 3 2 Type STB30NM50N STI30NM50N STF30NM50N STP30NM50N STW30NM50N VDSS (@Tjmax) 550 V 550 V 550 V RDS(on) max < 0.115 Ω < 0.115 Ω < 0.115 Ω < 0.115 Ω < 0.115 Ω ID 27 A 27 A 27 A 27 A D²PAK ww re .nu at an e ce. 8 com Tr ia 27 A(1) TO-220 550 V 550 V 1. Limited only by maximum temperature allowed ■ ■ ■ 100% avalanche tes.

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STB30NM50N,STI30NM50N,STF30NM50N STP30NM50N, STW30NM50N N-channel 500 V, 0.090 Ω, 27 A MDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features 3 1 l TO-247 3 2 Type STB30NM50N STI30NM50N STF30NM50N STP30NM50N STW30NM50N VDSS (@Tjmax) 550 V 550 V 550 V RDS(on) max < 0.115 Ω < 0.115 Ω < 0.115 Ω < 0.115 Ω < 0.115 Ω ID 27 A 27 A 27 A 27 A D²PAK ww re .nu at an e ce. 8 com Tr ia 27 A(1) TO-220 550 V 550 V 1. Limited only by maximum temperature allowed ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Application ■ Switching applications Description PD s b O t e l o Table 1. Order codes STB30NM50N STI30NM50N STF30NM50N STP30NM50N STW30NM50N F w C This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. P e d o r t c u ) (s s b O t e l o 1 r P e u d o 1 2 3 ) s ( ct I²PAK 1 2 3 12 3 TO-220FP Figure 1. Internal schematic diagram Device summary Marking 30NM50N 30NM50N 30NM50N 30NM50N 30NM50N Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube Tube Tube Tube September 2008 Rev 2 1/18 www.st.com 18 http://www.Datasheet4U.com Contents STB/I/F/P/W30NM50N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 6 Test circuits .............................................. 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 PD s b O t e l o 2/18 F w C P e d o r ww re .nu at an e ce. 8 com Tr ia t c u ) (s s b O t e l o r P e u d o l ) s ( ct STB/I/F/P/W30NM50N Electrical ratings 1 Electrical Table 2. Symbol ratings Absolute maximum ratings Value Parameter D²PAK/I²PAK TO-220FP TO-220/TO-247 500 Unit VDS VGS ID ID IDM (2) PTOT dv/dt (3) VISO Tstg Tj Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25 °C V V A A A W V/ns V °C °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 27 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS F w C Table 3. Symbol Rthj-case Rthj-pcb PD O o s b let r P e Tl ww re .nu at an e ce. 8 com Tr ia 27 17 Drain current (continuous) at TC = 100 °C Drain current (pulsed) 108 Total dissipation at TC = 25 °C Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Storage temperature Max. operating junction temperature Thermal data u d o s ( t c )- s b O e t e ol Pr 190 -- Parameter I²PAK T O-220 D²PAK TO-220FP TO-247 Unit 0.66 -3.1 -0.66 -50 °C/W °C/W °C/W °C Thermal resistance junctioncase max Thermal resistance junctionpcb max Thermal resistance junctionamb max -- 30 -- Rthj-amb 62.5 Maximum lead temperature for soldering purposes 300 Table 4. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max value 12 900 Unit A mJ l 27 (1) 17(1) ± 25 u d o 15 108 (1) 40 ct (s) 2500 -55 to 150 150 62.5 3/18 Electrical characteristics STB/I/F/P/W30NM50N 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on On /off states Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. 500 1 100 Typ. Max. Unit V µA µA Gate-body leakage current (VDS = 0) ww re .nu at an e ce. 8 com Tr ia VGS = ± 20 V 2 VGS = 10 V, ID = 13.5 A Zero gate voltage VDS = Max rating drain current (VGS = 0) VDS = Max rating, TC=125 °C l 100 4 Gate threshold voltage VDS = VGS, ID = 250 µA Static drain-source on resistance Table 6. Symbol gfs (1) Ciss Coss Crss Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance F w C Rg PD O o s b e t e l Pr Gate input resistance Total gate charge Gate-source charge Gate-drain charge u d o ct ) (s VDS = 15 V, ID = 13.5 A s b O Test conditions e t e ol o r P Min. du 3 0.090 Typ. 23 ) s ( ct 0.115 Max. nA V Ω Unit S pF pF pF VDS = 50 V, f = 1 MHz, VGS = 0 2740 160 15 f=1MHz Gate DC Bias=0 Test signal level=20 mV open drain VDD = 400 V, ID = 27 A, VGS = 10 V (see Figure 19) 2.7 94 15 50 Ω nC nC nC Qg.


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