Document
STB30NM50N,STI30NM50N,STF30NM50N STP30NM50N, STW30NM50N
N-channel 500 V, 0.090 Ω, 27 A MDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
Features
3 1
l
TO-247
3 2
Type STB30NM50N STI30NM50N STF30NM50N STP30NM50N STW30NM50N
VDSS (@Tjmax) 550 V 550 V 550 V
RDS(on) max < 0.115 Ω < 0.115 Ω < 0.115 Ω < 0.115 Ω < 0.115 Ω
ID 27 A 27 A 27 A 27 A D²PAK
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27 A(1) TO-220
550 V 550 V
1. Limited only by maximum temperature allowed ■ ■ ■
100% avalanche tested
Low input capacitance and gate charge Low gate input resistance
Application
■
Switching applications
Description
PD
s b O
t e l o
Table 1.
Order codes STB30NM50N STI30NM50N STF30NM50N STP30NM50N STW30NM50N
F w C
This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
P e
d o r
t c u
) (s
s b O
t e l o
1
r P e
u d o
1
2
3
) s ( ct
I²PAK
1 2
3 12
3
TO-220FP
Figure 1.
Internal schematic diagram
Device summary
Marking 30NM50N 30NM50N 30NM50N 30NM50N 30NM50N Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube Tube Tube Tube
September 2008
Rev 2
1/18
www.st.com 18
http://www.Datasheet4U.com
Contents
STB/I/F/P/W30NM50N
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 4 5 6
Test circuits
.............................................. 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
PD
s b O
t e l o
2/18
F w C
P e
d o r
ww re .nu at an e ce. 8 com Tr ia
t c u ) (s s b O t e l o r P e u d o
l
) s ( ct
STB/I/F/P/W30NM50N
Electrical ratings
1 Electrical
Table 2.
Symbol
ratings
Absolute maximum ratings
Value Parameter D²PAK/I²PAK TO-220FP TO-220/TO-247 500 Unit
VDS VGS ID ID IDM (2) PTOT dv/dt (3) VISO Tstg Tj
Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25 °C
V V A A A W V/ns V °C °C
1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area
3. ISD ≤ 27 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS
F w C
Table 3.
Symbol Rthj-case Rthj-pcb
PD
O
o s b
let
r P e
Tl
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27 17 Drain current (continuous) at TC = 100 °C Drain current (pulsed) 108 Total dissipation at TC = 25 °C Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Storage temperature Max. operating junction temperature
Thermal data
u d o
s ( t c
)-
s b O
e t e ol
Pr
190 --
Parameter
I²PAK T O-220 D²PAK TO-220FP TO-247 Unit 0.66 -3.1 -0.66 -50 °C/W °C/W °C/W °C
Thermal resistance junctioncase max
Thermal resistance junctionpcb max Thermal resistance junctionamb max
--
30 --
Rthj-amb
62.5
Maximum lead temperature for soldering purposes
300
Table 4.
Symbol IAR EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max value 12 900 Unit A mJ
l
27 (1) 17(1)
± 25
u d o
15
108 (1) 40
ct
(s)
2500
-55 to 150 150
62.5
3/18
Electrical characteristics
STB/I/F/P/W30NM50N
2 Electrical
characteristics
(TCASE = 25 °C unless otherwise specified) Table 5.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on
On /off states
Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. 500 1 100 Typ. Max. Unit V µA µA
Gate-body leakage current (VDS = 0)
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VGS = ± 20 V 2 VGS = 10 V, ID = 13.5 A
Zero gate voltage VDS = Max rating drain current (VGS = 0) VDS = Max rating, TC=125 °C
l
100 4
Gate threshold voltage VDS = VGS, ID = 250 µA Static drain-source on resistance
Table 6.
Symbol gfs (1) Ciss Coss Crss
Dynamic
Parameter
Forward transconductance
Input capacitance Output capacitance Reverse transfer capacitance
F w C
Rg
PD
O
o s b
e t e l
Pr
Gate input resistance Total gate charge Gate-source charge Gate-drain charge
u d o
ct
) (s
VDS = 15 V, ID = 13.5 A
s b O
Test conditions
e t e ol
o r P
Min.
du
3 0.090 Typ. 23
) s ( ct
0.115 Max.
nA V
Ω
Unit S pF pF pF
VDS = 50 V, f = 1 MHz, VGS = 0
2740 160 15
f=1MHz Gate DC Bias=0 Test signal level=20 mV open drain VDD = 400 V, ID = 27 A, VGS = 10 V (see Figure 19)
2.7 94 15 50
Ω nC nC nC
Qg.