STW30NM50N

STB30NM50N,STI30NM50N,STF30NM50N STP30NM50N, STW30NM50N N-channel 500 V, 0.090 Ω, 27 A MDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features 3 1 l TO-247 3 2 Type STB30NM50N STI30NM50N STF30NM50N STP30NM50N STW30NM50N VDSS (@Tjmax) 550 V 550 V 550 V RDS(on) max < 0.115 Ω < 0.115 Ω < 0.115 Ω < 0.115 Ω < 0.115 Ω ID 27 A 27 A 27 A 27 A D²PAK ww re .nu at an e ce. 8 com Tr ia 27 A(1) TO-220 550 V 550 V 1. Limited only by maximum temperature allowed ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Application ■ Switching applications Description PD s b O t e l o Table 1. Order codes STB30NM50N STI30NM50N STF30NM50N STP30NM50N STW30NM50N F w C This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. P e d o r t c u ) (s s b O t e l o 1 r P e u d o 1 2 3 ) s ( ct I²PAK 1 2 3 12 3 TO-220FP Figure 1. Internal schematic diagram Device summary Marking 30NM50N 30NM50N 30NM50N 30NM50N 30NM50N Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube Tube Tube Tube September 2008 Rev 2 1/18 www.st.com 18 http://www.Datasheet4U.com Contents STB/I/F/P/W30NM50N Contents 1 2 Electrical ratings . . . . . . . . . . ...