Power MOSFET
STB30NM50N,STI30NM50N,STF30NM50N STP30NM50N, STW30NM50N
N-channel 500 V, 0.090 Ω, 27 A MDmesh™ II Power MOSFET D2PAK, I2...
Description
STB30NM50N,STI30NM50N,STF30NM50N STP30NM50N, STW30NM50N
N-channel 500 V, 0.090 Ω, 27 A MDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
Features
3 1
l
TO-247
3 2
Type STB30NM50N STI30NM50N STF30NM50N STP30NM50N STW30NM50N
VDSS (@Tjmax) 550 V 550 V 550 V
RDS(on) max < 0.115 Ω < 0.115 Ω < 0.115 Ω < 0.115 Ω < 0.115 Ω
ID 27 A 27 A 27 A 27 A D²PAK
ww re .nu at an e ce. 8 com Tr ia
27 A(1) TO-220
550 V 550 V
1. Limited only by maximum temperature allowed ■ ■ ■
100% avalanche tested
Low input capacitance and gate charge Low gate input resistance
Application
■
Switching applications
Description
PD
s b O
t e l o
Table 1.
Order codes STB30NM50N STI30NM50N STF30NM50N STP30NM50N STW30NM50N
F w C
This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
P e
d o r
t c u
) (s
s b O
t e l o
1
r P e
u d o
1
2
3
) s ( ct
I²PAK
1 2
3 12
3
TO-220FP
Figure 1.
Internal schematic diagram
Device summary
Marking 30NM50N 30NM50N 30NM50N 30NM50N 30NM50N Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube Tube Tube Tube
September 2008
Rev 2
1/18
www.st.com 18
http://www.Datasheet4U.com
Contents
STB/I/F/P/W30NM50N
Contents
1 2 Electrical ratings . . . . . . . . . . ...
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