High Voltage IGBT
High Voltage IGBT
For Capacitor Discharge Applications ( Electrically Isolated Tab)
IXGF25N300
VCES = 3000V IC25 = 27A...
Description
High Voltage IGBT
For Capacitor Discharge Applications ( Electrically Isolated Tab)
IXGF25N300
VCES = 3000V IC25 = 27A VCE(sat) ≤ 3.0V
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC VISOL Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, VGE = 20V, 1ms VGE = 20V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C
Maximum Ratings 3000 3000 ± 20 ± 30 27 16
8 c T
V A A 140 A A
ICM = 160
t e n
VCE ≤ 0.8 VCES 114 -55 ... +150 150 -55 ... +150 300 260 20..120/4.5..27
r e .n a
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3000 3.0
ce.
°C °C °C °C °C Nm/lb-in. V~ g 5 V 5.0 V 50 μA 1 mA ±100 3.0 5.5 nA V V
Mounting Force
50/60Hz, 1 Minute
F w C
ua
4000
1.6 mm (0.062 in.) from Case for 10s Plastic Body for 10s
PD
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 1mA, VGE = 0V = 250μA, VCE = VGE
Characteristic Values Min. Typ. Max.
VCE = 0.8 VCES, VGE = 0V Note 2 ,TJ = 125°C VCE = 0V, VGE = ±20V IC IC = 25A, VGE = 15V, Note 1 = 75A
om
W Features Applications Advantages
ria l
ISOPLUS i4-PakTM V V V
1 2 5 Isolated Tab 5 = Collector 1 = Gate 2 = Emitter
Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V Electrical Isolation High Peak Current Capability Low Saturation Voltage Molding Epoxies Meet UL 94 V-0 Flammability Classification
Capacitor Discharge Pulser Circuits
High Power Density Easy to Mount
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