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IXGF25N300

IXYS Corporation

High Voltage IGBT

High Voltage IGBT For Capacitor Discharge Applications ( Electrically Isolated Tab) IXGF25N300 VCES = 3000V IC25 = 27A...


IXYS Corporation

IXGF25N300

File Download Download IXGF25N300 Datasheet


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High Voltage IGBT For Capacitor Discharge Applications ( Electrically Isolated Tab) IXGF25N300 VCES = 3000V IC25 = 27A VCE(sat) ≤ 3.0V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, VGE = 20V, 1ms VGE = 20V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C Maximum Ratings 3000 3000 ± 20 ± 30 27 16 8 c T V A A 140 A A ICM = 160 t e n VCE ≤ 0.8 VCES 114 -55 ... +150 150 -55 ... +150 300 260 20..120/4.5..27 r e .n a ww 3000 3.0 ce. °C °C °C °C °C Nm/lb-in. V~ g 5 V 5.0 V 50 μA 1 mA ±100 3.0 5.5 nA V V Mounting Force 50/60Hz, 1 Minute F w C ua 4000 1.6 mm (0.062 in.) from Case for 10s Plastic Body for 10s PD Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 1mA, VGE = 0V = 250μA, VCE = VGE Characteristic Values Min. Typ. Max. VCE = 0.8 VCES, VGE = 0V Note 2 ,TJ = 125°C VCE = 0V, VGE = ±20V IC IC = 25A, VGE = 15V, Note 1 = 75A om W Features Applications Advantages ria l ISOPLUS i4-PakTM V V V 1 2 5 Isolated Tab 5 = Collector 1 = Gate 2 = Emitter Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V Electrical Isolation High Peak Current Capability Low Saturation Voltage Molding Epoxies Meet UL 94 V-0 Flammability Classification Capacitor Discharge Pulser Circuits High Power Density Easy to Mount © 2009 IX...




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