IXTP7N60PM

Preliminary Technical Information PolarTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA7N60PM IXTP7N60PM VDSS ID25 RDS(on) = 600V = 4A ≤ 1.1Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ =150°C TC = 25°C Maximum Ratings 600 600 8 c T ± 30 ± 40 4 14 V V A A 7 400 10 A mJ t e n 41 om D S W Features g V V Ω r e .n a ww 600 3.0 TJ = 125°C ua 300 260 1.13/10 2.5 Characteristic Values Min. Typ. Max. 5.5 1.1 - 55 ... +150 150 - 55 ... +150 ce. °C °C °C °C °C Nm/lb.in. Plastic overmolded tab for electrical isolation International standard package Avanlanche rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings Applications DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor drives Uninterruptible power supplies High speed power switching applications ±100 nA 5 μA 50 μA DS99950(06/08) http://www.Datasheet4U.com Mounting torque Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 100μA VGS = ±30V, VDS = 0V VDS = VDSS VGS = 0V © 2008 IXYS CORPORATION, All rights reserved PD VGS = 10V, ID = 3.5A, Note 1 F w C 1.6 mm (0...