Si3443BDV

Si3443BDV Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω)I 0.060 at VGS = - 4.5 V - 20 0.090 at VGS = - 2.7 V 0.100 at VGS = - 2.5 V D FEATURES (A) - 4.7 - 3.8 - 3.7 Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View 1 6 (3) G (4) S 3 mm 2 5 3 2.85 mm 4 Ordering Information: Si3443BDV-T1-E3 (Lead (Pb)-free) Si3443BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) Part Marking Code: 3B (1, 2, 5, 6) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg - 1.7 2.0 1.3 - 55 to 150 - 4.7 - 3.8 - 20 - 0.9 1.1 0.7 W °C 5s Steady State - 20 ± 12 - 3.6 - 2.8 A Unit V THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 board, t ≤ 5 s. t≤5s Steady State Steady State RthJA RthJF Typical 50 90 30 Maximum 62.5 110 36 °C/W Unit For SPICE model information via the Worldwide Web: www.vishay.com/www/product/spice.htm Document Number: 72749 S-09-0660-Rev. C, 20-Apr-09 www.vishay.com 1 http://www.Datasheet4U.com Si3443BDV Vishay S...