FQPF9N90C

FQP9N90C / FQPF9N90C — N-Channel QFET® MOSFET FQP9N90C / FQPF9N90C N-Channel QFET® MOSFET 900 V, 8.0 A, 1.4 Ω December 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features 8 A, 900 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V, ID = 4 A Low Gate Charge (Typ. 45 nC) Low Crss (Typ. 14 pF) 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt PD Power Dissipation (TC = 25°C) - Derate above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering, 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) FQP9N90C FQPF9N90CT 900 8.0 8.0 * 2.8 2.8 * 32 32 * ± 30 900 8.0 20.5 4.0 205 68 1.64 ...