PTFB241402F
High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz
Description
The PTFB241402F integrates ...
PTFB241402F
High Power RF LDMOS Field Effect
Transistor 140 W, 2300 – 2400 MHz
Description
The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in the 2300 to 2400 MHz frequency band. Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal performance and superior reliability.
PTFB241402F Package H-37248-4
Gain (dB) Efficiency (%)
CW Performance, Single Side VDD = 30 V, IDQ = 660 mA
17.4
60
17.2
55
17.0
50
16.8 Gain
16.6
45 40
16.4
35
16.2
16.0
2320 MHz 2350 MHz
15.8 Efficiency 2380 MHz
30 25 20
15.6
15
40 41 42 43 44 45 46 47 48 49 Output Power (dBm)
Features
Broadband internal matching
Typical CW performance, single side - Output power (1dB compression) = 70 W - Efficiency = 55%
Increased negative gate-source voltage range for improved performance in Doherty amplifiers
Integrated ESD protection
Excellent thermal stability...
