PC28F128M29EWLA

32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory JR28F032M29EWXX; PZ28F032M29EWXX; JS28F064M29EWXX PC28F064M29EWXX; JR28F064M29EWXX; PZ28F064M29EWXX JS28F128M29EWXX; PC28F128M29EWXX; RC28F128M29EWXX Features Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65–3.6V (I/O buffers) Asynchronous random or page read – Page size: 8 words or 16 bytes – Page access: 25ns – Random access: 60ns (BGA); 70ns (TSOP) Buffer program: 256-word MAX program buffer Program time – 0.56µs per byte (1.8 MB/s TYP when using 256word buffer size in buffer program without V PPH) – 0.31µs per byte (3.2 MB/s TYP when using 256word buffer size in buffer program with V PPH) Memory organization – 32Mb: 64 main blocks, 64KB each, or eight 8KB boot blocks (top or bottom) and 63 main blocks, 64KB each – 64Mb: 128 main blocks, 64KB each, or eight 8KB boot blocks (top or bottom) and 127 main blocks, 64 KB each – 128Mb: 128 main blocks, 128KB each Program/erase controller – Embedded byte/word program algorithms Program/erase suspend and resume capability – READ operation on any block during a PROGRAM SUSPEND operation – READ or PROGRAM operation on one block during an ERASE SUSPEND operation on another block BLANK CHECK operation to verify an erased block Unlock bypass, block erase, chip erase, and write to buffer capability – Fast buffered/batch programming – Fast block and chip erase VPP/WP# pin protection – VPPH voltage on V PP ...