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JR28F064M29EWHA Dataheets PDF



Part Number JR28F064M29EWHA
Manufacturers Micron
Logo Micron
Description Parallel NOR Flash Embedded Memory
Datasheet JR28F064M29EWHA DatasheetJR28F064M29EWHA Datasheet (PDF)

32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory JR28F032M29EWXX; PZ28F032M29EWXX; JS28F064M29EWXX PC28F064M29EWXX; JR28F064M29EWXX; PZ28F064M29EWXX JS28F128M29EWXX; PC28F128M29EWXX; RC28F128M29EWXX Features • Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65–3.6V (I/O buffers) • Asynchronous random or page read – Page size: 8 words or 16 bytes – Page access: 25ns – Random access: 60ns (BGA); 70ns (TSOP) • Buffer program: 256-word .

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32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory JR28F032M29EWXX; PZ28F032M29EWXX; JS28F064M29EWXX PC28F064M29EWXX; JR28F064M29EWXX; PZ28F064M29EWXX JS28F128M29EWXX; PC28F128M29EWXX; RC28F128M29EWXX Features • Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65–3.6V (I/O buffers) • Asynchronous random or page read – Page size: 8 words or 16 bytes – Page access: 25ns – Random access: 60ns (BGA); 70ns (TSOP) • Buffer program: 256-word MAX program buffer • Program time – 0.56µs per byte (1.8 MB/s TYP when using 256word buffer size in buffer program without V PPH) – 0.31µs per byte (3.2 MB/s TYP when using 256word buffer size in buffer program with V PPH) • Memory organization – 32Mb: 64 main blocks, 64KB each, or eight 8KB boot blocks (top or bottom) and 63 main blocks, 64KB each – 64Mb: 128 main blocks, 64KB each, or eight 8KB boot blocks (top or bottom) and 127 main blocks, 64 KB each – 128Mb: 128 main blocks, 128KB each • Program/erase controller – Embedded byte/word program algorithms • Program/erase suspend and resume capability – READ operation on any block during a PROGRAM SUSPEND operation – READ or PROGRAM operation on one block during an ERASE SUSPEND operation on another block • BLANK CHECK operation to verify an erased block • Unlock bypass, block erase, chip erase, and write to buffer capability – Fast buffered/batch programming – Fast block and chip erase • VPP/WP# pin protection – VPPH voltage on V PP to accelerate programming performance – Protects highest/lowest block (H/L uniform) or top/bottom two blocks (T/B boot) • Software protection – Volatile protection – Nonvolatile protection – Password protection – Password access • Extended memory block – 128-word (256-byte) block for permanent secure identification – Program or lock implemented at the factory or by the customer • Low-power consumption: Standby mode • JESD47H-compliant – 100,000 minimum ERASE cycles per block – Data retention: 20 years (TYP) • 65nm single-bit cell process technology • Packages (JEDEC-standard) – 56-pin TSOP (128Mb, 64Mb) – 48-pin TSOP (64Mb, 32Mb) – 64-ball FBGA (128Mb, 64Mb) – 48-ball BGA (64Mb, 32Mb) • Green packages available – RoHS-compliant – Halogen-free • Operating temperature – Ambient: –40°C to +85°C PDF: 09005aef84dc44a7 m29ew_32Mb-128Mb.pdf - Rev. B 11/12 EN 1 Products and specifications discussed herein are subject to change by Micron without notice. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2012 Micron Technology, Inc. All rights reserved. http://www.Datasheet4U.com 32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash Features Part Numbering Information This product is available with the prelocked extended memory block. Devices are shipped from the factory with memory content bits erased to 1. For a list of available options, such as packages or high/low protection, or for further information, contact your Micron sales rep.


RC28F128M29EWLA JR28F064M29EWHA JR28F064M29EWLA


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