2SK3140. K3140 Datasheet

K3140 2SK3140. Datasheet pdf. Equivalent


Part Number

K3140

Description

2SK3140

Manufacture

Hitachi Semiconductor

Total Page 10 Pages
Datasheet
Download K3140 Datasheet


K3140
2SK3140
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 6 mtyp.
Low drive current
4 V gate drive device can be driven from 5 V source
Outline
TO–220CFM
ADE-208-767C (Z)
4th. Edition
February 1999
D
G
S
123
1. Gate
2. Drain
3. Source
http://www.Datasheet4U.com

K3140
2SK3140
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
I Note 1
D(pulse)
I DR
I Note 3
AP
E Note 3
AR
Pch Note 2
Channel temperature
Tch
Storage temperature
Tstg
Note:
1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Ratings
60
±20
60
240
60
50
214
35
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
2


Features 2SK3140 Silicon N Channel MOS FET High S peed Power Switching ADE-208-767C (Z) 4th. Edition February 1999 Features • Low on-resistance R DS(on) = 6 mΩ ty p. • Low drive current • 4 V gate d rive device can be driven from 5 V sour ce Outline TO–220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source http://ww w.Datasheet4U.com 2SK3140 Absolute Max imum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-d rain diode reverse drain current Avalan che current Avalanche energy Channel di ssipation Channel temperature Storage t emperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP EAR Note 3 Note 3 No te 1 Ratings 60 ±20 60 240 60 50 214 35 150 –55 to +150 Unit V V A A A A mJ W °C °C Pch Note 2 Tch Tstg 1. P W ≤ 10 µs, duty cycle ≤ 1% 2. Valu e at Tc = 25°C 3. Value at Tch = 25°C , Rg ≥ 50 Ω 2 2SK3140 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltege drain current Sy.
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