FGA60N65SMD Stop IGBT Datasheet

FGA60N65SMD Datasheet, PDF, Equivalent


Part Number

FGA60N65SMD

Description

60A Field Stop IGBT

Manufacture

Fairchild Semiconductor

Total Page 9 Pages
Datasheet
Download FGA60N65SMD Datasheet


FGA60N65SMD
October 2013
FGA60N65SMD
650 V, 60 A Field Stop IGBT
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperature Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 60 A
• Fast Switching : EOFF = 7.5 uJ/A
• Tighten Parameter Distribution
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC, Telecom, ESS
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 2nd generation IGBTs offer the optimum performance
for solar inverter, UPS, welder, telecom, ESS and PFC applica-
tions where low conduction and switching losses are essential.
G CE
TO-3PN
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
©2011 Fairchild Semiconductor Corporation
FGA60N65SMD Rev. C2
1
C
G
E
Ratings
650
± 20
± 30
120
60
180
60
30
180
600
300
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
W
W
oC
oC
oC
www.fairchildsemi.com
http://www.Datasheet4U.com

FGA60N65SMD
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
-
-
-
Max.
0.25
1.1
40
Package Marking and Ordering Information
Device Marking
FGA60N65SMD
Device
FGA60N65SMD
Package
TO-3PN
Reel Size
-
Tape Width
-
Unit
oC/W
oC/W
oC/W
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
ΔBVCES
ΔTJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250μA
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250μA, VCE = VGE
IC = 60A, VGE = 15V
IC = 60A, VGE = 15V,
TC = 175oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
VCC = 400V, IC = 60A,
RG = 3Ω, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 60A,
RG = 3Ω, VGE = 15V,
Inductive Load, TC = 175oC
650 - - V
- 0.6 - V/oC
- - 250 μA
-
-
±400
nA
3.5 4.5 6.0
- 1.9 2.5
- 2.1 -
V
V
V
- 2915 -
- 270 -
- 85 -
pF
pF
pF
-
18 27
ns
-
47 70
ns
-
104 146
ns
-
50 68
ns
-
1.54
2.31
mJ
-
0.45
0.60
mJ
-
1.99
2.91
mJ
- 18 - ns
- 41 - ns
- 115 -
ns
- 48 - ns
- 2.08 -
mJ
- 0.78 -
mJ
- 2.86 -
mJ
©2011 Fairchild Semiconductor Corporation
FGA60N65SMD Rev. C2
2
www.fairchildsemi.com


Features FGA60N65SMD — 650 V, 60 A Field Stop I GBT October 2013 FGA60N65SMD 650 V, 6 0 A Field Stop IGBT Features • Maximu m Junction Temperature : TJ = • High Current Capability • Low Saturation V oltage: VCE(sat) = 1.9 V(Typ.) @ IC = 6 0 A • Fast Switching : EOFF = 7.5 uJ/ A • Tighten Parameter Distribution RoHS Compliant 175oC • Positive Tem perature Co-efficient for Easy Parallel Operating General Description Using n ovel field stop IGBT technology, Fairch ild’s new series of field stop 2nd ge neration IGBTs offer the optimum perfor mance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses ar e essential. Applications • Solar In verter, UPS, Welder, PFC, Telecom, ESS C G TO-3PN G CE E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM (1) PD TJ Tstg TL Description Col lector to Emitter Voltage Gate to Emitt er Voltage Transient Gate to Emitter Vo ltage Collector Current Collector Current Pulsed Collector Current Diode Forward Cu.
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