NTE189 Complementary Transistors Datasheet

NTE189 Datasheet, PDF, Equivalent


Part Number

NTE189

Description

Silicon Complementary Transistors

Manufacture

NTE

Total Page 2 Pages
Datasheet
Download NTE189 Datasheet


NTE189
NTE188 (NPN) & NTE189 (PNP)
Silicon Complementary Transistors
High Voltage Amplifier & Driver
Description:
The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a T O202N type
package designed for general purpose, high voltage amplifier and driver applications.
Features:
D High CollectorEmitter Breakdown Voltage: V(BR)CEO = 80V @ IC = 1mA
D High Power Dissipation: PD = 10W @ TC = +25°C
Absolute Maximum Ratings:
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
CollectorBase Voiltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
EmitterBase Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/°C
Total
PDowerearteDiAssbiopvaetio2n5°(CTC.
= +25°C),
.........
.P.D.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
. . . . 10W
80mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C
Thermal Resistance, JunctiontoAmbient (Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W
Note 1. NTE188 is a discontinued device and is no longer available.
Note 2. RthJA is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorEmitter Breakdown Voltage
EmitterBase Breakdown Voltage
Collector Cutoff Current
NTE188
NTE189
V(BR)CEO
V(BR)EBO
ICBO
IC = 1mA, IB = 0, Note 3
IE = 100μA, IC = 0
VCB = 80V, IE = 0
VCB = 60V, IE = 0
Note 3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
Min Typ Max Unit
80 − − V
4 − −V
− − 100 nA
− − 100 nA
http://www.Datasheet4U.com

NTE189
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics (Note 3)
DC Current Gain
NTE188
NTE189
CollectorEmitter Saturation Voltage
NTE188
NTE189
BaseEmitter ON Voltage
NTE188
NTE189
hFE
VCE(sat)
VBE(on)
IC = 50mA, VCE = 1V
IC = 250mA, VCE = 1V
IC = 50mA, VCE = 1V
IC = 50mA, VCE = 1V
IC = 250mA, VCE = 1V
IC = 50mA, VCE = 1V
IC = 250mA, IB = 10mA
IC = 250mA, IB = 25mA
IC = 250mA, IB = 10mA
IC = 250mA, IB = 25mA
IC = 250mA, VCE = 5V
60 110
30 65
33
80 160
50 130
8
0.18 0.4
0.1
0.22 0.5
0.15
0.76 1.2
0.78 1.2
V
V
V
V
V
V
SmallSignal Characteristics
Current GainBandwidth Product
NTE188
NTE189
fT IC = 250mA, VCE = 5V, f = 100MHz, 50 150 MHz
Note 2
50 100 MHz
Output Capacitance
NTE188
NTE189
Cob
VCB = 10V, IE = 0, f = 100MHz
6 12 pF
10 15 pF
Note 3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
.160
(4.06)
.380 (9.65) Max
.050 (1.27)
.100 (2.54)
.280 (7.25) Max
.128 (3.28) Dia
.218
(5.55)
.475
(12.0)
Min
EBC
.995
(25.3)
.100 (2.54)
.200 (5.08)
Collector Connected to Tab


Features NTE188 (NPN) & NTE189 (PNP) Silicon Comp lementary Transistors High Voltage Ampl ifier & Driver Description: The NTE188 (NPN) and NTE189 (PNP) are complementar y silicon transistors in a T O202N type package designed for general purpose, high voltage amplifier and driver appli cations. Features: D High Collector−E mitter Breakdown Voltage: V(BR)CEO = 80 V @ IC = 1mA D High Power Dissipation: PD = 10W @ TC = +25°C Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Base Voiltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Colle ctor Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Keywords NTE189, datasheet, pdf, NTE, Silicon, Complementary, Transistors, TE189, E189, 189, NTE18, NTE1, NTE, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)