Document
FDD4141_F085 P-Channel PowerTrench® MOSFET
November 2013
FDD4141_F085
P-Channel PowerTrench® MOSFET
-40V, -50A, 12.3mΩ
Features
Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A High performance trench technology for extremely low rDS(on) Qualified to AEC Q101 RoHS Compliant
General Description
This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.
Applications
Inverter Power Supplies
S
D G S
G
D -P A52 K TO -2 (T O -252)
D
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25°C TA = 25°C (Note 1a) (Note 3) TC = 25°C TC = 25°C TA = 25°C (Note 1a) Ratings -40 ±20 -50 -58 -10.8 -100 337 69 2.4 -55 to +175 mJ W °C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC RθJA Maximum Thermal Resistance, Junction to Case Maximum Thermal Resistance, Junction to Ambient (Note 1a) 1.8 52 °C/W
Package Marking and Ordering Information
Device Marking FDD4141 Device FDD4141_F085 Package D-PAK (TO-252)
1
Reel Size 13’’
Tape Width 12mm
Quantity 2500 units
www.fairchildsemi.com
©2013 Fairchild Semiconductor Corporation FDD4141_F085 Rev.C1
http://www.Datasheet4U.com
FDD4141_F085 P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250μA, VGS = 0V ID = -250μA, referenced to 25°C VDS = -32V, VGS = 0V VGS = ±20V, VDS = 0V -40 -29 -1 ±100 V mV/°C μA nA
On Characteristics
VGS(th) ΔVGS(th) ΔTJ rDS(on) Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = -250μA ID = -250μA, referenced to 25°C VGS = -10V, ID = -12.7A Static Drain to Source On Resistance VGS = -4.5V, ID = -10.4A VGS = -10V, ID = -12.7A, TJ = 175°C VDS = -5V, ID = -12.7A -1 -1.8 5.8 10.1 14.5 17.3 38 -3 12.3 18.0 19.4 S mΩ V mV/°C
gFS
Forward Transconductance
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = -20V, VGS = 0V, f = 1MHz f = 1MHz 2085 360 210 4.6 2775 480 310 pF pF pF Ω
Switching Characteristics
td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source.