2V7002L

MOSFET – N-Channel, Small Signal, SOT-23 60 V, 115 mA 2N7002L, 2V7002L Features 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L) These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage Drain−Gate Voltage (RGS = 1.0 MW) Drain Current − Continuous TC = 25°C (Note 1) − Continuous TC = 100°C (Note 1) − Pulsed (Note 2) VDSS VDGR ID ID IDM 60 60 ± 115 ± 75 ± 800 Vdc Vdc mAdc Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) VGS ± 20 Vdc VGSM ± 40 Vpk THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 3) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient PD RqJA 225 mW 1.8 mW/°C 556 °C/W Total Device Dissipation (Note 4) Alumina Substrate, TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature PD RqJA TJ, Tstg 300 mW 2.4 mW/°C 417 °C/W − 55 to °C +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 3. FR−5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4...