2V7002L Signal MOSFET Datasheet

2V7002L Datasheet, PDF, Equivalent


Part Number

2V7002L

Description

Small Signal MOSFET

Manufacture

ON Semiconductor

Total Page 4 Pages
Datasheet
Download 2V7002L Datasheet


2V7002L
2N7002L, 2V7002L
Small Signal MOSFET
60 V, 115 mA, N−Channel SOT−23
Features
2V Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable (2V7002L)
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain−Source Voltage
Drain−Gate Voltage (RGS = 1.0 MW)
Drain Current
− Continuous TC = 25°C (Note 1)
− Continuous TC = 100°C (Note 1)
− Pulsed (Note 2)
VDSS
VDGR
ID
ID
IDM
60
60
±115
±75
±800
Vdc
Vdc
mAdc
Gate−Source Voltage
− Continuous
− Non−repetitive (tp 50 ms)
VGS ±20 Vdc
VGSM ±40 Vpk
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 3) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
PD
RqJA
225 mW
1.8 mW/°C
556 °C/W
Total Device Dissipation
(Note 4) Alumina Substrate, TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
PD
RqJA
TJ, Tstg
300 mW
2.4 mW/°C
417 °C/W
55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
3. FR−5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
www.onsemi.com
V(BR)DSS
60 V
RDS(on) MAX
7.5 W @ 10 V,
500 mA
N−Channel
3
ID MAX
115 mA
1
2
3 MARKING
DIAGRAM
1
2
SOT−23
CASE 318
STYLE 21
702 MG
G
1
702 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
2N7002LT1G
2N7002LT3G
SOT−23 3000 Tape & Reel
(Pb−Free) 10,000 Tape & Reel
2V7002LT1G
2V7002LT3G
2N7002LT1H*
SOT−23
(Pb−Free)
3000 Tape & Reel
10,000 Tape & Reel
3000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Not for new design.
© Semiconductor Components Industries, LLC, 2013
October, 2016 − Rev. 8
1
Publication Order Number:
2N7002L/D

2V7002L
2N7002L, 2V7002L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0, ID = 10 mAdc)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 60 Vdc)
V(BR)DSS
TJ = 25°C
TJ = 125°C
IDSS
Gate−Body Leakage Current, Forward
(VGS = 20 Vdc)
Gate−Body Leakage Current, Reverse
(VGS = −20 Vdc)
ON CHARACTERISTICS (Note 5)
IGSSF
IGSSR
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
On−State Drain Current
(VDS 2.0 VDS(on), VGS = 10 Vdc)
Static Drain−Source On−State Voltage
(VGS = 10 Vdc, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
Static Drain−Source On−State Resistance
(VGS = 10 V, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
Forward Transconductance
(VDS 2.0 VDS(on), ID = 200 mAdc)
DYNAMIC CHARACTERISTICS
VGS(th)
ID(on)
VDS(on)
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
rDS(on)
gFS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 5)
Ciss
Coss
Crss
Turn−On Delay Time
Turn−Off Delay Time
(VDD = 25 Vdc, ID ^ 500 mAdc,
RG = 25 W, RL = 50 W, Vgen = 10 V)
BODY−DRAIN DIODE RATINGS
td(on)
td(off)
Diode Forward On−Voltage
(IS = 11.5 mAdc, VGS = 0 V)
Source Current Continuous
(Body Diode)
VSD
IS
Source Current Pulsed
5. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
ISM
Min
60
1.0
500
80
Typ Max Unit
− − Vdc
− 1.0 mAdc
− 500
− 100 nAdc
−100
nAdc
− 2.5 Vdc
− − mA
Vdc
− 3.75
− 0.375
Ohms
− 7.5
− 13.5
− 7.5
− 13.5
− − mS
− 50 pF
− 25 pF
− 5.0 pF
− 20 ns
− 40 ns
− −1.5 Vdc
−115
mAdc
− 800
mAdc
www.onsemi.com
2


Features 2N7002L, 2V7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Featu res • 2V Prefix for Automotive and Ot her Applications Requiring Unique Site and Control Change Requirements; AEC− Q101 Qualified and PPAP Capable (2V7002 L) • These Devices are Pb−Free, Hal ogen Free/BFR Free and are RoHS Complia nt MAXIMUM RATINGS Rating Symbol Val ue Unit Drain−Source Voltage Drain Gate Voltage (RGS = 1.0 MW) Drain Curr ent − Continuous TC = 25°C (Note 1) − Continuous TC = 100°C (Note 1) − Pulsed (Note 2) VDSS VDGR ID ID IDM 60 60 ± 115 ± 75 ± 800 Vdc Vd c mAdc Gate−Source Voltage − Conti nuous − Non−repetitive (tp ≤ 50 m s) VGS ± 20 Vdc VGSM ± 40 Vpk T HERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipat ion FR−5 Board (Note 3) TA = 25°C De rate above 25°C Thermal Resistance, Ju nction−to−Ambient PD RqJA 225 mW 1.8 mW/°C 556 °C/W Total Device Diss ipation (Note 4) Alumina Substrate, TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Stora.
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