2SA928

ST 2SA928 PNP Silicon Epitaxial Planar Transistor for audio power amplifier The transistor is subdivided into two groups, O and Y, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range -VCBO -VCEO -VEBO -IC 2 Ptot 1 Tj 150 Tstg 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Value 30 30 5 Unit V V V A W O C C - 55 to + 150 O Characteristics at Ta = 25 OC Parameter Symbol DC Current Gain at -VCE = 2 V, -IC = 500 mA Current Gain Group Collector Base Cutoff Current at -VCB = 30 V Emitter Base Cutoff Current at -VEB = 5 V Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 10 mA Emitter Base Breakdown Voltage at -IE = 1 mA Collector Emitter Saturation Voltage at -IC = 1.5 A, -IB = 30 mA Base Emitter Voltage at -VCE = 2 V, -IC = 500 mA Gain Bandwidth Product at VCE = 2 V, IC = 500 mA Collector Output Capacitance at VCB = 10 V, f = 1 MHz Min. O Y hFE hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VBE fT Cob - 48 -30 30 5 -100 160 Typ. - Max. 200 320 100 100 Unit nA nA V V V ---2 120 1 - V V MHz pF http://www.Datasheet4U.com Dated : 07/12/2002 ...