2SA928 Planar Transistor Datasheet

2SA928 Datasheet, PDF, Equivalent


Part Number

2SA928

Description

PNP Silicon Epitaxial Planar Transistor

Manufacture

PACO

Total Page 1 Pages
Datasheet
Download 2SA928 Datasheet


2SA928
ST 2SA928
PNP Silicon Epitaxial Planar Transistor
for audio power amplifier
The transistor is subdivided into two groups, O
and Y, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter Symbol
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
-VCBO
-VCEO
-VEBO
-IC 2
Ptot 1
Tj 150
Tstg
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Value
30
30
5
- 55 to + 150
Unit
V
V
V
A
W
OC
OC
Characteristics at Ta = 25 OC
Parameter Symbol
DC Current Gain
at -VCE = 2 V, -IC = 500 mA
Current
Collector Base Cutoff Current
at -VCB = 30 V
Emitter Base Cutoff Current
at -VEB = 5 V
Gain Group O
Y
hFE
hFE
-ICBO -
-IEBO
Collector Base Breakdown Voltage
at -IC = 100 µA
-V(BR)CBO
Collector Emitter Breakdown Voltage
at -IC = 10 mA
-V(BR)CEO
Emitter Base Breakdown Voltage
at -IE = 1 mA
-V(BR)EBO
Collector Emitter Saturation Voltage
at -IC = 1.5 A, -IB = 30 mA
-VCE(sat)
Base Emitter Voltage
at -VCE = 2 V, -IC = 500 mA
-VBE -
Gain Bandwidth Product
at VCE = 2 V, IC = 500 mA
fT -
Collector Output Capacitance
at VCB = 10 V, f = 1 MHz
Cob
Min. Typ.
100 -
160 -
-
--
30 - -
30 - -
5 --
--
-
120
- 48 -
Max.
200
320
100
100
2
1
-
Unit
-
-
nA
nA
V
V
V
V
V
MHz
pF
Dated : 07/12/2002
http://www.Datasheet4U.com


Features ST 2SA928 PNP Silicon Epitaxial Planar T ransistor for audio power amplifier The transistor is subdivided into two grou ps, O and Y, according to its DC curren t gain. Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Collector Base Voltage Collector Emitter Voltage Emit ter Base Voltage Collector Current Powe r Dissipation Junction Temperature Stor age Temperature Range -VCBO -VCEO -VEBO -IC 2 Ptot 1 Tj 150 Tstg 1. Emitter 2 . Collector 3. Base TO-92 Plastic Packa ge Value 30 30 5 Unit V V V A W O C C - 55 to + 150 O Characteristics at Ta = 25 OC Parameter Symbol DC Current Gain at -VCE = 2 V, -IC = 500 mA Curre nt Gain Group Collector Base Cutoff Cur rent at -VCB = 30 V Emitter Base Cutoff Current at -VEB = 5 V Collector Base B reakdown Voltage at -IC = 100 µA Colle ctor Emitter Breakdown Voltage at -IC = 10 mA Emitter Base Breakdown Voltage a t -IE = 1 mA Collector Emitter Saturati on Voltage at -IC = 1.5 A, -IB = 30 mA Base Emitter Voltage at -VCE = 2 V, -IC = 500 mA Gain Bandwidth .
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