CEF02N6 Effect Transistor Datasheet

CEF02N6 Datasheet, PDF, Equivalent


Part Number

CEF02N6

Description

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Manufacture

CET

Total Page 5 Pages
Datasheet
Download CEF02N6 Datasheet


CEF02N6
CEF02N6
Sep. 2002
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
600V , 1.5A , RDS(ON)=5@VGS=10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220F full-pak for through hole
G
D
6
G
D
S
TO-220F
S
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
-Pulsed
ID
IDM
Drain-Source Diode Forward Current
IS
Maximum Power Dissipation @Tc=25 C
Derate above 25 C
Operating and Storage Temperautre Range
PD
TJ,T STG
Limit
600
Ć30
1.5
4.5
4.5
29
0.23
-65 to 150
Unit
V
V
A
A
A
W
W/ C
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
RįJC
Thermal Resistance, Junction-to-Ambient
RįJA
6-117
4.3
65
C/W
C/W
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CEF02N6
CEF02N6
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
Symbol
a
DRAIN-SOURCE AVALANCHE RATING
Condition
Min Typ Max Unit
Single Pulse Drain-Source
6 Avalanche Energy
Maximum Drain-Source
Avalanche Current
EAS
VDD =50V, L=60mH
RG=9.1
IAS
125 mJ
2A
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS VGS = 0V,ID = 250µA 600
IDSS VDS =6 00V,V GS =0 V
V
25 µA
Gate-Body Leakage
ON CHARACTERISTICSa
IGSS VGS =3Ć 0V, VDS =0 V
Ć100 nA
Gate Threshold Voltage
VGS(th) VDS =V GS,I D = 250µA 24
V
Drain-Source On-State Resistance RDS(ON) VGS =10V, ID =1 A
3.8 5.0
On-State Drain Current
ID(ON)
Forward Transconductance
gFS
SWITCHING CHARACTERISTICSb
VGS = 10V, VDS =1 0V
VDS = 50V, ID =1 A
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tD(ON) VDD = 300V,
tr
ID =2 A,
VGS =1 0V
tD(OFF) RGEN=18
Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS =480V, ID = 2A,
VGS =10V
Qgd
6-118
2
1.2
A
S
18 35 ns
18 35 ns
50 90 ns
16 40 ns
20 25 nC
2 nC
12 nC


Features CEF02N6 Sep. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transist or FEATURES 600V , 1.5A , RDS(ON)=5 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 F full-pak for through hole D 6 G G D S S TO-220F ABSOLUTE MAXIMUM RATING S (Tc=25 C unless otherwise noted) Para meter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulse d Drain-Source Diode Forward Current Ma ximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Tempe rautre Range Symbol VDS VGS ID IDM IS P D TJ,T STG Limit 600 Unit V V A A A W W / C C Ć 30 1.5 4.5 4.5 29 0.23 -65 to 150 THERMAL CHARACTERISTICS Thermal R esistance, Junction-to-Case Thermal Res istance, Junction-to-Ambient RįJC RįJ A 6-117 4.3 65 C/W C/W http://www.Da tasheet4U.com CEF02N6 ELECTRICAL CHARA CTERISTICS (TC=25 C unless otherwise no ted) Parameter Single Pulse Drain-Sourc e Avalanche Energy Maximum Drain-Source Avalanche Current Symbol a .
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