Effect Transistor. CEI02N6 Datasheet


CEI02N6 Transistor. Datasheet pdf. Equivalent


Part Number

CEI02N6

Description

N-Channel Enhancement Mode Field Effect Transistor

Manufacture

CET

Total Page 4 Pages
Datasheet
Download CEI02N6 Datasheet


CEI02N6
CEP02N6/CEB02N6
CEI02N6/CEF02N6
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP02N6
CEB02N6
CEI02N6
CEF02N6
VDSS
600V
600V
600V
600V
RDS(ON)
5
5
5
5
ID @VGS
2A 10V
2A 10V
2A 10V
2A e 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
DG
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEI SERIES
TO-262(I2-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263/262 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS
VGS
ID
IDM f
600
±30
2
6
2e
6e
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
60 29
PD 0.48 0.23
Single Pulsed Avalanche Energy d
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
EAS 125 125
IAR 2 2
EAR 5.4 5.4
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
2.1
62.5
4.3
65
Units
V
V
A
A
W
W/ C
mJ
A
mJ
C
Units
C/W
C/W
2002.September
4-2
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CEI02N6
CEP02N6/CEB02N6
CEI02N6/CEF02N6
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
600
25
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 1A
2
4
3.8 5.0
V
Forward Transconductance
Dynamic Characteristics c
gFS VDS = 50V, ID = 1A
1.2 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
250
50
pF
pF
Crss 30 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 300V, ID = 2A,
VGS = 10V, RGEN = 18
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 480V, ID = 2A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
18 35 ns
18 35 ns
50 90 ns
16 40 ns
20 25 nC
2 nC
12 nC
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS g
VSD
VGS = 0V, IS = 2A h
2A
1.5 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.L =60mH, IAS =2.0A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C .
e.Limited only by maximum temperature allowed .
f .Pulse width limited by safe operating area .
g.Full package IS(max) = 1.5A .
h.Full package VSD test condition IS = 1.5A .
4
4-3


Features CEP02N6/CEB02N6 CEI02N6/CEF02N6 N-Channe l Enhancement Mode Field Effect Transis tor FEATURES Type CEP02N6 CEB02N6 CEI02 N6 CEF02N6 VDSS 600V 600V 600V 600V RDS (ON) 5Ω 5Ω 5Ω 5Ω ID 2A 2A 2A 2A e @VGS 10V 10V 10V 10V D Super high de nse cell design for extremely low RDS(O N). High power and current handing capa bility. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-2 20F full-pak for through hole. D G G D S S CEB SERIES TO-263(DD-PAK) G CEI SERIES TO-262(I2-PAK) G D S G D CE P SERIES TO-220 S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltag e Drain Current-Continuous Drain Curren t-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 VDS V GS ID IDM PD EAS IAR EAR TJ,Tstg f TO- 220F Units V V 600 ±30 2 6 60 0.48 125 2 5.4 -55 to 150 2 6 29 0.23 125 2 5.4 e e A A W W/ C mJ A mJ C Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Repetitive Avalanche Current.
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