TK8A55DA. K8A55DA Datasheet


K8A55DA TK8A55DA. Datasheet pdf. Equivalent


K8A55DA


TK8A55DA
TK8A55DA
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

TK8A55DA
Switching Regulator Applications
Ф3.2 ± 0.2 10 ± 0.3

Unit: mm
2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 13 ± 0.5 0.69 ± 0.15 Ф0.2 M A

Absolute Maximum Ratings (Ta = 25°C)
Characteristics S Drain-source voltage Gate-source voltage DC (Note Drain current 1) ymbol VDSS VGSS ID IDP PD 2) EAS IAR EAR Tch Tstg Rating 550 ±30 7.5 30 40 163 7.5 4.0 150 −55 to 150 A W mJ A mJ °C °C Unit V V

2.54 0.64 ± 0.15

15.0 ± 0.3

• • • •

Low drain-source ON-resistance: RDS (ON) = 0.9 Ω(typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Pulse (t = 1 ms) (Note 1)

1: Gate 2: Drain 3: Source

Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range

JEDEC JEITA TOSHIBA

⎯ SC-67 2-10U1B

Weight: 1.7 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please d...


K8A55DA
TK8A55DA
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS)
TK8A55DA
Switching Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 0.9 Ω(typ.)
High forward transfer admittance: |Yfs| = 3.0 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 550 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Ф3.2 ± 0.2 10 ± 0.3
A
Unit: mm
2.7 ± 0.2
1.14 ± 0.15
Absolute Maximum Ratings (Ta = 25°C)
0.69 ± 0.15
Ф0.2 M A
Characteristics S
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note
1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note
2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
ymbol
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
550
±30
7.5
30
40
163
7.5
4.0
150
55 to 150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
2.54
2.54
12 3
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics S
Thermal resistance, channel to case
Thermal resistance, channel to ambient
ymbol
Rth (ch-c)
Rth (ch-a)
Max
3.125
62.5
Unit
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 5.0 mH, RG = 25 Ω, IAR = 7.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
Start of commercial production
2009-02
1 2013-11-01
http://www.Datasheet4U.com

K8A55DA
TK8A55DA
Electrical Characteristics (Ta = 25°C)
Characteristics S
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
ymbol
Test Condition
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
tr
ton
VGS = ±30 V, VDS = 0 V
VDS = 550 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 3.8 A
VDS = 10 V, ID = 3.8 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
10 V
VGS
0V
50 Ω
ID = 3.8 A VOUT
RL = 53 Ω
tf
VDD 200 V
toff Duty 1%, tw = 10 μs
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 7.5 A
Qgd
Min Typ. Max
⎯ ⎯ ±1
⎯ ⎯ 10
550
2.0 4.0
0.9
1.07
0.8 3.0
800
4
100
20
40
12
60
16
10
6
Unit
μA
μA
V
V
Ω
S
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics S
Continuous drain reverse current
(Note
1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
ymbol
Test Condition
IDR
IDRP
VDSF
trr
Qrr
IDR = 7.5 A, VGS = 0 V
IDR = 7.5 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯ ⎯ 7.5
⎯ ⎯ 30
⎯ ⎯ −1.7
1200
10
A
A
V
ns
μC
Marking
K8A55DA
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Part No.
(or abbreviation code)
Lot No.
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2011/65/EU of the European Parliament and
of the Council of 8 June 2011 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
2 2013-11-01




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