STB19NF20 Power MOSFET Datasheet

STB19NF20 Datasheet, PDF, Equivalent


Part Number

STB19NF20

Description

Power MOSFET

Manufacture

STMicroelectronics

Total Page 30 Pages
Datasheet
Download STB19NF20 Datasheet


STB19NF20
STB19NF20, STD19NF20
STF19NF20, STP19NF20
Datasheet
N-channel 200 V, 0.11 Ω, 15 A, MESH OVERLAY™ Power MOSFETs
in D2PAK, DPAK, TO220FP and TO-220 packages
TAB
3
1
D2 PAK
TAB
23
1
DPAK
TAB
3
2
1
TO-220FP
D(2, TAB)
TO-220
1 23
Features
Type
VDS
RDS(on) max.
STB19NF20
STD19NF20
STF19NF20
200 V
0.16 Ω
STP19NF20
• Extremely high dv/dt capability
• Gate charge minimized
• Very low intrinsic capacitance
ID
15 A
Package
D2PAK
DPAK
TO-220FP
TO-220
Applications
G(1) • Switching applications
Description
S(3)
AM01475v1_noZen These Power MOSFETs are designed using STMicroelectronics' consolidated strip-
layout-based MESH OVERLAY™ process. The result is a product that matches or
improves on the performance of comparable standard parts from other
manufacturers.
Product status links
STB19NF20
STD19NF20
STF19NF20
STP19NF20
DS4935 - Rev 7 - August 2018
For further information contact your local STMicroelectronics sales office.
www.st.com

STB19NF20
STB19NF20,STD19NF20,STF19NF20,STP19NF20
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage
VGS Gate-source voltage
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
IDM(2)
Drain current (pulsed)
PTOT
Total dissipation at Tcase = 25 °C
VISO
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t = 1 s, TC = 25 °C)
dv/dt(3)
Peak diode recovery voltage slope
Tstg Storage temperature range
Tj Operating junction temperature range
1. This value is limited by package.
2. Pulse width is limited by safe operating area.
3. ISD ≤ 15 A, di/dt ≤ 300 A/μs, VDD = 80 % V(BR)DSS
Value
D²PAK, DPAK,
TO-220
TO-220FP
200
±20
15 15(1)
9.45
9.45(1)
60 60(1)
90 25
2.5
15
-55 to 150
Unit
V
A
A
W
kV
V/ns
°C
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case
Rthj-pcb(1) Thermal resistance junction-pcb
Rthj-amb Thermal resistance junction-ambient
1. When mounted on an 1-inch² FR-4, 2oz Cu board
D²PAK
35
Value
DPAK TO-220 TO-220FP
1.39 5
50
62.5
Unit
°C/W
Symbol
IAR
EAS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)
Single-pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
15
110
Unit
A
mJ
DS4935 - Rev 7
page 2/30


Features STB19NF20, STD19NF20, STF19NF20, STP19NF 20 N-channel 200 V, 0.11 Ω typ., 15 A MESH OVERLAY™ Power MOSFET in D²PAK , DPAK, TO-220FP and TO-220 packages Da tasheet — production data TAB 3 1 D PAK 7$%   DPAK TAB Features Type S TB19NF20 STD19NF20 STF19NF20 STP19NF20 VDS RDS(on) max. 200 V 200 V 200 V 2 00 V 0.16 Ω 0.16 Ω 0.16 Ω 0.16 ID 15 A 15 A 15 A 15 A PTOT 90 W 9 0 W 25 W 90 W 3 2 1 TO-220FP 3 2 1 TO -220 Figure 1. Internal schematic diag ram ' 7$% • Extremely high dv/dt capability • Gate charge minimized Very low intrinsic capacitances Appl ications • Switching application *  6  Description This Power MOSFET i s designed using the company’s consol idated strip layout-based MESH OVERLAY process. The result is a product tha t matches or improves on the performanc e of comparable standard parts from oth er manufacturers. $0Y Order cod e STB19NF20 STD19NF20 STF19NF20 STP19NF 20 Table 1. Device summary Marking Package 19NF20 D2PAK 19NF20 DPAK 19NF20 TO-220F.
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