FQP15P12. 15P12 Datasheet


15P12 FQP15P12. Datasheet pdf. Equivalent


Part Number

15P12

Description

FQP15P12

Manufacture

Fairchild Semiconductor

Total Page 10 Pages
Datasheet
Download 15P12 Datasheet


15P12
FQP15P12/FQPF15P12
120V P-Channel MOSFET
QFET®
General Description
These P -Channel enhanc ement m ode pow er f ield effect
transistors ar e prod uced using F airchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially t ailored to
minimize on-st ate resist ance, provide superior swit ching
performance, and wit hstand high energy pulse in t he
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
• -15A, -120V, RDS(on) = 0.2@VGS = -10 V
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 110 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
S
!
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G!
▶▲
!
D
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
FQP15P12
FQPF15P12
-120
-15 -15 *
-10.6
-10.6 *
-60 -60 *
± 30
1157
-15
10
-5.0
100 41
0.67
0.27
-55 to +175
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP15P12
1.5
40
62.5
FQPF15P12
3.66
--
62.5
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
http://www.Datasheet4U.com

15P12
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
-120 --
ID = -250 µA, Referenced to 25°C -- -0.13
IDSS
Zero Gate Voltage Drain Current
VDS = -120 V, VGS = 0 V
VDS = -96 V, TC = 150°C
-- --
-- --
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V
-- --
-- --
--
--
-1
-10
-100
100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = -250 µA
-2.0
VGS = -10 V, ID = -7.5 A
--
VDS = -40 V, ID = -7.5 A (Note 4) --
--
0.17
9.5
-4.0
0.2
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 850 1100 pF
-- 310 400
pF
-- 110 140
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = -60 V, ID = -15 A,
RG = 25
-- 15 40
-- 100 210
-- 80 170
(Note 4, 5)
--
80
170
VDS = -96 V, ID = -15 A,
-- 29 38
VGS = -10 V
-- 5.1
--
(Note 4, 5) --
15
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -15 A
trr Reverse Recovery Time
VGS = 0 V, IS = -15 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 6.0mH, IAS = -15A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD -15A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
--
--
--
--
--
--
--
--
126
0.61
-15
-60
-4.0
--
--
A
A
V
ns
µC
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003


Features FQP15P12/FQPF15P12 QFET FQP15P12/FQPF15 P12 120V P-Channel MOSFET General Descr iption These P -Channel enhanc ement m ode pow er f ield effect transistors ar e prod uced using F airchild’s propr ietary, planar stripe, DMOS technology. This advanced technology has been espe cially t ailored to minimize on-st ate resist ance, provide superior swit chin g performance, and wit hstand high ener gy pulse in t he avalanche and commutat ion mode. These devices are well suited for low voltage applications such as a udio amplifier, high efficiency switchi ng DC/DC converters, and DC motor contr ol. ® Features • • • • • • -15A, -120V, RDS(on) = 0.2Ω @V GS = -10 V Low gate charge ( typical 29 nC) Low Crss ( typical 110 pF) Fast sw itching 100% avalanche tested Improved dv/dt capability 175°C maximum junctio n temperature rating S ! ● ● G! ▶ ▲ ● G DS TO-220 FQP Series G D S TO-220F FQPF Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless o.
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