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SFH610A, SFH6106
Vishay Semiconductors
Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS
FEATURES
• Good CTR linearity depending on forward current
• Isolation test voltage, 5300 VRMS • High collector emitter voltage, VCEO = 70 V • Low saturation voltage
A1
4E
• Fast switching times
• Low CTR degradation
C2
3C
• Temperature stable
• Low coupling capacitance
• End stackable, 0.100" (2.54 mm) spacing
• High common mode interference immunity
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION The SFH610A and SFH6106 feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 or SMD package.
The coupling devices are designed for signal transmission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm spacing.
Creepage and clearance distances of > 8.0 mm are achieved with option 6 and option 8. This version complies with IEC 60950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 VRMS or DC. Specifications subject to change.
ORDERING INFORMATION
S
F
H
6
1
0
x
-
#
AGENCY APPROVALS • UL1577, file no. E52744 system code H or J, double
protection • DIN EN 60747-5-5 (VDE 0884) available with option 1 • BSI IEC 60950; IEC 60065 • CSA 93751
X
0
#
#
T
DIP-6
Option 6
PART NUMBER
CTR BIN
PACKAGE OPTION
TAPE AND REEL
7.62 mm Option 7
10.16 mm Option 8
AGENCY CERTIFIED/PACKAGE
CTR (%)
UL, BSI, CSA
40 to 80
63 to 125
100 to 200
DIP-4
SFH610A-1
SFH610A-2
SFH610A-3
DIP-4, 400 mil
-
SFH610A-2X006 SFH610A-3X006
SMD-4
SFH6106-1T
SFH6106-2T
SFH6106-3T
SMD-4, option 7
-
-
SFH610A-3X007T
SMD-4, 400 mil, option 8
-
-
-
VDE, UL, BSI, CSA (option 1)
40 to 80
63 to 125
100 to 200
DIP-4
SFH610A-1X001 SFH610A-2X001 SFH610A-3X001
DIP-4, 400 mil
SFH610A-1X016
-
SFH610A-3X016
SMD-4
SFH6106-1X001T SFH6106-2X001T SFH6106-3X001T
SMD-4, 400 mil, option 8
SFH610A-1X018T
-
-
Note • For additional information on the available options refer to option information
> 0.7 mm
160 to 320 SFH610A-4
SFH6106-4T
SFH610A-4X008T
160 to 320 SFH610A-4X001 SFH610A-4X016 SFH6106-4X001T
-
9.27 mm
250 to 500 SFH610A-5
SFH6106-5T
250 to 500 -
Rev. 2.5, 28-Mar-18
1
Document Number: 83666
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SFH610A, SFH6106
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage DC forward current Surge forward current Power dissipation OUTPUT Collector emitter voltage Emitter collector voltage
Collector current
Power dissipation COUPLER Storage temperature range Ambient temperature range
Soldering temperature (1)
t ≤ 10 μs
VR
6
V
IF
60
mA
IFSM
2.5
A
Pdiss
100
mW
tp ≤ 1.0 ms
VCEO
70
V
VECO
7
V
IC
50
mA
IC
100
mA
Pdiss
150
mW
Tstg
-55 to +150
°C
Tamb
-55 to +100
°C
max. 10 s, dip soldering distance to seating plane ≥ 1.5 mm
Tsld
260
°C
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP).
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage Reverse current Capacitance Thermal resistance OUTPUT
IF = 60 mA VR = 6 V
VR = 0 V, f = 1 MHz
VF
-
1.25
1.65
V
IR
-
0.01
10
μA
CO
-
13
-
pF
Rthja
-
750
-
K/W
Collector emitter capacitance Thermal resistance
Collector emitter leakage current
COUPLER
VCE = 5 V, f = 1 MHz VCE = 10 V
SFH610A-1 SFH6106-1 SFH610A-2 SFH6106-2 SFH610A-3 SFH6106-3 SFH610A-4 SFH6106-4 SFH610A-5 SFH6106-5
CCE Rthja ICEO ICEO ICEO ICEO ICEO ICEO ICEO ICEO ICEO ICEO
-
5.2
-
pF
-
500
-
K/W
-
2
50
nA
-
2
50
nA
-
2
50
nA
-
2
50
nA
-
5
100
nA
-
5
100
nA
-
5
100
nA
-
5
100
nA
-
5
100
nA
-
5
100
nA
Collector emitter saturation voltage Coupling capacitance
IF = 10 mA, IC = 2.5 mA f = 1 MHz
VCEsat CC
-
0.25
0.4
V
-
0.4
-
pF
Note
• Minimum and maximum values are testing requireme.