AP10N60W POWER MOSFET Datasheet

AP10N60W Datasheet, PDF, Equivalent


Part Number

AP10N60W

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacture

Advanced Power Electronics

Total Page 5 Pages
Datasheet
Download AP10N60W Datasheet


AP10N60W
Advanced Power
Electronics Corp.
100% Avalanche Test
Fast Switching Characteristic
Simple Drive Requirement
AP10N60W
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
RDS(ON)
600V
0.75Ω
G ID 10A
S
Description
AP10N60 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. The
TO-3P type provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
The TO-3P package is widely preferred for commercial-industrial
applications. The device is suited for switch mode power supplies,
DC-AC converters and high current high speed switching circuits.
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
G
D
S
Rating
600
± 30
10
5.8
36
156
50
10
-55 to 150
-55 to 150
TO-3P
Units
V
V
A
A
A
W
mJ
A
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
0.8
40
Unit
/W
/W
1
200803181
http://www.Datasheet4U.com

AP10N60W
AP10N60W
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance3
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=1mA
VGS=10V, ID=4A
VDS=VGS, ID=250uA
VDS=10V, ID=4A
VDS=480V, VGS=0V
VDS=480V, VGS=0V
VGS=±30V
ID=8A
VDS=480V
VGS=10V
VDD=300V
ID=4A
RG=10Ω,VGS=4.7V
RD=75Ω
VGS=0V
VDS=15V
f=1.0MHz
600 - - V
- - 0.75 Ω
2 - 4V
- 3.8 -
S
- - 25 uA
- - 250 uA
- - ±100 nA
- 45 72 nC
- 11 - nC
- 15 - nC
- 16 - ns
- 9 - ns
- 48 - ns
- 11 - ns
- 2380 3800 pF
- 475 - pF
- 4.3 - pF
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage3
Reverse Recovery Time3
Qrr Reverse Recovery Charge
Test Conditions
Tj=25, IS=8A, VGS=0V
IS=8A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.5 V
- 550 - ns
- 9.2 - uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1.0mH , RG=25Ω , IAS=10A.
3.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2


Features AP10N60W RoHS-compliant Product Advance d Power Electronics Corp. ▼ 100% Aval anche Test ▼ Fast Switching Character istic ▼ Simple Drive Requirement G N -CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 600V 0.75Ω 10A S Description AP10N60 series are specia lly designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. The TO-3P type provide high blocking voltage to overco me voltage surge and sag in the toughes t power system with the best combinatio n of fast switching,ruggedized design a nd cost-effectiveness. The TO-3P packag e is widely preferred for commercial-in dustrial applications. The device is su ited for switch mode power supplies, DC -AC converters and high current high sp eed switching circuits. G D S TO-3P Absolute Maximum Ratings Symbol VDS V GS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=2 5℃ EAS IAR TSTG TJ Parameter Drain-So urce Voltage Gate-Source Voltage Contin uous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed D.
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