AP10N70W POWER MOSFET Datasheet

AP10N70W Datasheet, PDF, Equivalent


Part Number

AP10N70W

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacture

Advanced Power Electronics

Total Page 5 Pages
Datasheet
Download AP10N70W Datasheet


AP10N70W
Advanced Power
Electronics Corp.
100% Avalanche Test
Fast Switching Characteristic
Simple Drive Requirement
AP10N70W
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
600V
RDS(ON)
0.6Ω
G ID 10A
S
Description
AP10N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. The TO-3P type
provide high blocking voltage to overcome voltage surge and sag in the
toughest power system with the best combination of fast switching,
ruggedized design and cost-effectiveness.
The TO-3P package is widely preferred for commercial-industrial applications.
The device is suited for switch mode power supplies ,DC-AC converters
and high current high speed switching circuits.
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
600
± 30
10
6.3
40
174
1.39
50
10
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
0.72
40
Data & specifications subject to change without notice
TO-3P
Units
V
V
A
A
A
W
W/
mJ
A
Unit
/W
/W
201022072-1/4
http://www.Datasheet4U.com

AP10N70W
AP10N70W
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=1.0mA
VGS=10V, ID=5.0A
VDS=VGS, ID=250uA
VDS=10V, ID=5A
VDS=600V, VGS=0V
VDS=480V, VGS=0V
VGS=±30V
ID=10A
VDS=480V
VGS=10V
VDD=300V
ID=10A
RG=10Ω,VGS=10V
RD=30Ω
VGS=0V
VDS=15V
f=1.0MHz
f=1.0MHz
600 - - V
- - 0.6 Ω
2 - 4V
-5-S
- - 10 uA
- - 100 uA
- - ±100 nA
- 36 57 nC
- 8.3 - nC
- 11.5 - nC
- 15 - ns
- 20 - ns
- 52 - ns
- 23 - ns
- 1950 3120 pF
- 630 - pF
- 20 - pF
- 23
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage3
trr Reverse Recovery Time3
Qrr Reverse Recovery Charge
Test Conditions
Tj=25, IS=10A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.5 V
- 575 - ns
- 10.6 - uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1.0mH , RG=25Ω , IAS=10A.
3.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4


Features AP10N70W RoHS-compliant Product Advance d Power Electronics Corp. ▼ 100% Aval anche Test ▼ Fast Switching Character istic ▼ Simple Drive Requirement G N -CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 600V 0.6Ω 10A S Description AP10N70 series are special ly designed as main switching devices f or universal 90~265VAC off-line AC/DC c onverter applications. The TO-3P type p rovide high blocking voltage to overcom e voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design a nd cost-effectiveness. The TO-3P packag e is widely preferred for commercial-in dustrial applications. The device is su ited for switch mode power supplies ,DC -AC converters and high current high sp eed switching circuits. G D S TO-3P Absolute Maximum Ratings Symbol VDS V GS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=2 5℃ EAS IAR TSTG TJ Parameter Drain-So urce Voltage Gate-Source Voltage Contin uous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed D.
Keywords AP10N70W, datasheet, pdf, Advanced Power Electronics, N-CHANNEL, ENHANCEMENT, MODE, POWER, MOSFET, P10N70W, 10N70W, 0N70W, AP10N70, AP10N7, AP10N, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)