2SC4511. C4511 Datasheet


C4511 2SC4511. Datasheet pdf. Equivalent


C4511


2SC4511
2SC4511
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1725) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4511 120 80 6 6 3 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C

Application : Audio and General Purpose
(Ta=25°C) 2SC4511 10max 10max 80min 50min∗ 0.5max 20typ 110typ V MHz pF
13.0min

sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB ∗hFE Rank Conditions VCB=120V VEB=6V IC=25mA VCE=4V, IC=2A IC=2A, IB=0.2A VCE=12V, IE=–0.5A VCB=10V, f=1MHz

External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5

Unit

µA
V
16.9±0.3 8.4±0.2

µA

1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2

O(50 to100), P(70 to140), Y(90 to180)
2.54

sTypical Switching Characteristics (Common Emitter)
VCC (V) 30 RL (Ω) 10 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.3 IB2 (A) –0.3 ton (µs) 0.16typ tstg (µs) 2.60typ tf (µs) 0.34typ

3.9 B C E

I C – V CE Characteristics (Typical)
0m A

V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V ) 3

I C – V BE Temperature Characteristics (Typical)
6 (V CE =4V)

6
20

15

0m

A
1

m 00

A

A 80m

5
C (A)

50 mA

Collector Current I C (A)

4

2

4

Collector Current I

3

30mA

Cas e Te mp (Cas e Tem ) p)

1

I C =6A 4A 2A 0 0 0.5 Base Current I 1.0
B (A)

0

0

13

2
CE (V)

4

1.5

0

02

Collector-Emi...



C4511
2SC4511
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1725)
Application : Audio and General Purpose
sAbsolute maximum ratings
Symbol
2SC4511
VCBO
120
VCEO
80
VEBO
6
IC 6
IB 3
PC 30(Tc=25°C)
Tj 150
Tstg –55 to +150
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
sElectrical Characteristics
(Ta=25°C)
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
Conditions
VCB=120V
VEB=6V
IC=25mA
VCE=4V, IC=2A
IC=2A, IB=0.2A
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
2SC4511
10max
10max
80min
50min
0.5max
20typ
110typ
Unit
µA
µA
V
V
MHz
pF
hFE Rank O(50 to100), P(70 to140), Y(90 to180)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V) () (A) (V) (V) (A)
30 10 3
10 –5 0.3
IB2
(A)
–0.3
ton
(µs)
0.16typ
tstg
(µs)
2.60typ
tf
(µs)
0.34typ
External Dimensions FM20(TO220F)
10.1±0.2
4.2±0.2
2.8 c0.5
ø3.3±0.2
a
b
1.35±0.15
1.35±0.15
2.54
0.85
+0.2
-0.1
2.54
0.45
+0.2
-0.1
2.2±0.2
2.4±0.2
Weight : Approx 2.0g
BCE
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
6
200mA 150mA
100mA
80mA
5
50mA
4
3 30mA
2 20mA
IB=10mA
1
0
0 13 2
4
Collector-Emitter Voltage V
CE (V)
V CE( s a t ) – I B Characteristics (Typical)
3
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
6
24
12
IC=6A
4A
2A
00
0 0.5 1.0 1.5 02
1
Base Current I B(A)
Base-Emittor Voltage V BE (V)
h FE– I C Characteristics (Typical)
(VCE=4V)
300
h FE– I C Temperature Characteristics (Typical)
200
125˚C
(VCE=4V)
θ j-a– t Characteristics
5
100
50
30
0.02
100
Typ
50
0.1 0.5 1
C o l l e c t o r C u r r e n t I C(A)
20
5 6 0.02
25˚C
–30˚C
0.1 0.5 1
Collector Current I C(A)
1
0.5
0.4
56 1
10 100
Time t(ms)
1000 2000
f T– I E Characteristics (Typical)
(VCE=12V)
40
30
Typ
20
10
0
–0.02
110
–0.1
–1
Emitter Current IE(A)
–6
Safe Operating Area (Single Pulse)
20
10 10ms
5 DC 100ms
1
0.5
0.1
0.05
3
Without Heatsink
Natural Cooling
5 10
50
C o l l e c t o r - E m i t t e r V o l t a g e V CE (V)
100
Pc–Ta Derating
30
20
10
Without Heatsink
2
0
0 25 50 75 100
Ambient Temperature Ta(˚C)
125
150
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