2SC4511
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1725) sAbsolute maximum ratings (Ta=25°C)
S...
2SC4511
Silicon
NPN Triple Diffused Planar
Transistor (Complement to type 2SA1725) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4511 120 80 6 6 3 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Audio and General Purpose
(Ta=25°C) 2SC4511 10max 10max 80min 50min∗ 0.5max 20typ 110typ V MHz pF
13.0min
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB ∗hFE Rank Conditions VCB=120V VEB=6V IC=25mA VCE=4V, IC=2A IC=2A, IB=0.2A VCE=12V, IE=–0.5A VCB=10V, f=1MHz
External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5
Unit
µA
V
16.9±0.3 8.4±0.2
µA
1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2
O(50 to100), P(70 to140), Y(90 to180)
2.54
sTypical Switching Characteristics (Common Emitter)
VCC (V) 30 RL (Ω) 10 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.3 IB2 (A) –0.3 ton (µs) 0.16typ tstg (µs) 2.60typ tf (µs) 0.34typ
3.9 B C E
I C – V CE Characteristics (Typical)
0m A
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V ) 3
I C – V BE Temperature Characteristics (Typical)
6 (V CE =4V)
6
20
15
0m
A
1
m 00
A
A 80m
5
C (A)
50 mA
Collector Current I C (A)
4
2
4
Collector Current I
3
30mA
Cas e Te mp (Cas e Tem ) p)
1
I C =6A 4A 2A 0 0 0.5 Base Current I 1.0
B (A)
0
0
13
2
CE (V)
4
1.5
0
02
Collector-Emitter Voltage V
Base-Emittor Voltage V
–30˚C
25˚C
125
I B =10mA
˚C (
(Case
2
20mA
1
2
1
B...
