SIlicon Transistor. STC8550 Datasheet


STC8550 Transistor. Datasheet pdf. Equivalent


Part Number

STC8550

Description

PNP SIlicon Transistor

Manufacture

Suntac

Total Page 2 Pages
Datasheet
Download STC8550 Datasheet


STC8550
STC8550
0 PNP Silicon Transistor
2W Output Amplifier of Portable Radios in
Class B Push-pull Operation.
• Complimentary to STC8050
• Collector Current: IC=1.5A
• Collector Power Dissipation: PC=2W (TC=25°C)
1 TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Ratings
-40
-40
-6
-1.5
1
150
-65 ~ 150
Units
V
V
V
A
W
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
hFE3
VCE (sat)
VBE (sat)
VBE (on)
Cob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
Output Capacitance
Test Condition
IC= -100µA, IE=0
IC= -2mA, IB=0
IE= -100µA, IC=0
VCB= -35V, IE=0
VEB= -6V, IC=0
VCE= -1V, IC= -5mA
VCE= -1V, IC= -100mA
VCE= -1V, IC= -800mA
IC= -800mA, IB= -80mA
IC= -800mA, IB= -80mA
VCE= -1V, IC= -10mA
VCB= -10V, IE=0
f=1MHz
fT
Current Gain Bandwidth Product
VCE= -10V, IC= -50mA
Min.
-40
-40
-6
45
85
40
100
Typ.
170
160
80
-0.28
-0.98
-0.66
15
200
Max.
-100
-100
Units
V
V
V
nA
nA
300
-0.5 V
-1.2 V
-1.0 V
pF
MHz
hFEClassification
Classification
hFE2
A
85 ~ 160
B
120 ~ 200
C
200 ~ 400
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STC8550
Typical Characteristics
STC8550
-0.5
IB=-4.0mA
-0.4 IB=-3.5mA
IB=-3.0mA
-0.3 IB=-2.5mA
IB=-2.0mA
-0.2 IB=-1.5mA
IB=-1.0mA
-0.1
IB=-0.5mA
-0.4 -0.8 -1.2 -1.6 -2.0
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
-10000
IC=10IB
-1000
-100
VBE(sat)
VCE(sat)
-10
-0.1
-1 -10 -100
IC[mA], COLLECTOR CURRENT
-1000
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
f=1MHz
IE=0
1000
100
VCE = -1V
10
1
-0.1 -1 -10 -100
IC[mA], COLLECTOR CURRENT
Figure 2. DC current Gain
-1000
-100
VCE = -1V
-10
-1
-0.1
-0.0
-0.2 -0.4 -0.6 -0.8 -1.0
VBE[V], BASE-EMITTER VOLTAGE
-1.2
Figure 4. Base-Emitter On Voltage
1000
VCE=-10V
10 100
1
-1
-10
-100
-1000
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
10
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
Figure 6. Current Gain Bandwidth Product


Features S 0 2W Output Amplifier of Portable Rad ios in Class B Push-pull Operation. • Complimentary to STC8050 • Collector Current: IC=1.5A • Collector Power D issipation: PC=2W (TC=25°C) STC8550 PNP Silicon Transistor 1 TO-92 1. Em itter 2. Base 3. Collector PNP Epitaxi al Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Pa rameter Collector-Base Voltage Collecto r-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissi pation Junction Temperature Storage Tem perature Ratings -40 -40 -6 -1.5 1 150 -65 ~ 150 Units V V V A W °C °C Elec trical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEB O ICBO IEBO hFE1 hFE2 hFE3 VCE (sat) VB E (sat) VBE (on) Cob fT Parameter Colle ctor-Base Breakdown Voltage Collector-E mitter Breakdown Voltage Emitter-Base B reakdown Voltage Collector Cut-off Curr ent Emitter Cut-off Current DC Current Gain Test Condition IC= -100 µA, IE=0 IC= -2mA, IB=0 IE= -100 µA, IC=0 VCB.
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