MV7404T1 Tuning Diode Datasheet

MV7404T1 Datasheet, PDF, Equivalent


Part Number

MV7404T1

Description

Silicon Hyper-Abrupt Tuning Diode

Manufacture

Motorola

Total Page 4 Pages
Datasheet
Download MV7404T1 Datasheet


MV7404T1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MV7404T1/D
Silicon Hyper-Abrupt Tuning Diode
This silicon tuning diode is designed for high capacitance and a tuning ratio of
greater than 10 times over a bias range of 2.0 to 10 volts. It provides tuning over a
broad frequency range from the AM broadcast band to 100 MHz. The device is
housed in the SOT-223 package which is designed for medium power surface mount
applications.
High Capacitance
Large Capacitance Change with Small Bias Change
Guaranteed High Q
The SOT-223 Package can be soldered using wave or reflow.
SOT–223 package ensures level mounting which results in improved ther-
mal conduction and allows visual inspection of soldered joints. The formed
leads absorb thermal stress during soldering, eliminating the possibility of
damage to the die.
1
ANODE
2, 4
CATHODE
MV7404T1
Motorola Preferred Device
SOT–223 PACKAGE
HIGH TUNING RATIO
VOLTAGE VARIABLE
SURFACE MOUNT
DIODE
4
1
2
3
CASE 318E – 04, STYLE 2
SOT– 223 (TO – 261AA)
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Reverse Voltage
Forward Current
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
VR
IF
PD
Operating and Storage Temperature Range
Lead Temperature for Soldering Purposes, 1/6” from case
Time in Solder Bath
1. FR-4 board, 0.0625 in2, 2 oz. copper.
TJ, Tstg
TL
DEVICE MARKING
V7404
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Breakdown Voltage
(IR = 10 µAdc)
V(BR)R
Reverse Voltage Leakage Current
(VR = 10 Vdc, f = 1.0 MHz)
IR
Diode Capacitance
(VR = 2.0 Vdc, f = 1.0 MHz)
CT
Figure of Merit
(VR = 2.0 Vdc, f = 1.0 MHz)
Tuning Ratio C2/C10
(f = 1.0 MHz)
Q
TR
Value
12
250
800
6.4
– 55 to +125
260
10
Unit
Vdc
mAdc
mW
mW/°C
°C
°C
Sec
Min Typ Max Unit
12 — — Vdc
— — 100 nAdc
96 120 144 pF
200 — — —
10 — — —
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoottoorroollaa, ISncm. 1a9l9l–7Signal Transistors, FETs and Diodes Device Data
1
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MV7404T1
MV7404T1
TYPICAL CHARACTERISTICS
500
TA = 25°C
200 f = 1 MHz
100
50
20
10
5
0 2 4 6 8 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance versus
Reverse Voltage
1.08
f = 1.0 MHz
1.06
1.04 VR = 2 Vdc
1.02
1
0.98
0.96
0.94
0.92
–50
–25 0
25 50 75 100 125
TA, AMBIENT TEMPERATURE (°C)
Figure 2. Diode Capacitance versus
Ambient Temperature
150
1000
VR = 4 Vdc
VR = 6 Vdc
VR = 2 Vdc
100
10
12
5 10 20
f, FREQUENCY (MHz)
50 100
Figure 3. Figure of Merit versus Frequency
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MV7404T1/D Sili con Hyper-Abrupt Tuning Diode This sili con tuning diode is designed for high c apacitance and a tuning ratio of greate r than 10 times over a bias range of 2. 0 to 10 volts. It provides tuning over a broad frequency range from the AM bro adcast band to 100 MHz. The device is h oused in the SOT-223 package which is d esigned for medium power surface mount applications. • High Capacitance • Large Capacitance Change with Small Bia s Change • Guaranteed High Q • The SOT-223 Package can be soldered using w ave or reflow. • SOT–223 package en sures level mounting which results in i mproved thermal conduction and allows v isual inspection of soldered joints. Th e formed leads absorb thermal stress du ring soldering, eliminating the possibi lity of damage to the die. 1 ANODE 2, 4 CATHODE MV7404T1 Motorola Preferred D evice SOT–223 PACKAGE HIGH TUNING RA TIO VOLTAGE VARIABLE SURFACE MOUNT DIODE 4 1 2 3 CASE 318E – 04, STYLE 2 .
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