P2N04L03 SPB160N04S2L-03 Datasheet

P2N04L03 Datasheet, PDF, Equivalent


Part Number

P2N04L03

Description

SPB160N04S2L-03

Manufacture

Infineon

Total Page 8 Pages
Datasheet
Download P2N04L03 Datasheet


P2N04L03
OptiMOS® Power-Transistor
Feature
N-Channel
Enhancement mode
Logic Level
High Current Rating
Low On-Resistance RDS(on)
175°C operating temperature
Avalanche rated
dv/dt rated
SPB160N04S2L-03
Product Summary
VDS 40 V
RDS(on) max. SMD version 2.7 m
ID 160 A
P- TO263 -7-3
Type
Package
Ordering Code Marking
SPB160N04S2L-03 P- TO263 -7-3 Q67060-S6138 P2N04L03
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
TC=25°C
ID
TC=100°C
Pulsed drain current
TC=25°C
ID puls
Avalanche energy, single pulse
ID=80A, VDD=25V, RGS=25
EAS
Repetitive avalanche energy, limited by Tjmax2)
EAR
Reverse diode dv/dt
dv/dt
IS=160A, VDS=32V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
VGS
Ptot
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Tj , Tstg
Value
160
160
640
810
30
6
±20
300
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-05-22
http://www.Datasheet4U.com

P2N04L03
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
SPB160N04S2L-03
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
RthJA
- - 0.5 K/W
- - 62
- - 62
- - 40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS 40
-
-V
VGS=0V, ID=1mA
Gate threshold voltage, VGS = VDS
VGS(th) 1.2 1.6
2
ID =250µA
Zero gate voltage drain current
VDS=40V, VGS=0V, Tj=25°C
IDSS
µA
- 0.01 1
VDS=40V, VGS=0V, Tj=125°C
- 1 100
Gate-source leakage current
IGSS
- 1 100 nA
VGS=20V, VDS=0V
Drain-source on-state resistance
RDS(on) - 2.7 3.7 m
VGS=4.5V, ID=80A
Drain-source on-state resistance
RDS(on) - 2.1 2.7
VGS=10V, ID=80A
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 243A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2003-05-22


Features SPB160N04S2L-03 OptiMOS® Power-Transist or Feature • N-Channel Product Summa ry VDS RDS(on) max. SMD version ID 40 2 .7 160 P- TO263 -7-3 V mΩ A • Enh ancement mode • Logic Level • High Current Rating • Low On-Resistance RD S(on) • 175°C operating temperature • Avalanche rated • d v/dt rated T ype Package SPB160N04S2L-03 P- TO263 -7 -3 Ordering Code Q67060-S6138 Marking P2N04L03 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Paramet er Continuous drain current1) TC=25°C TC=100°C Symbol ID Value 160 160 Un it A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 640 810 30 6 ±20 300 -55... +175 55/ 175/56 kV/µs V W °C mJ Avalanche ene rgy, single pulse ID=80A, V DD=25V, RGS =25Ω Repetitive avalanche energy, li mited by Tjmax 2) Reverse diode dv/dt I S=160A, VDS=32V, di/dt=200A/µs, Tjmax= 175°C Gate source voltage Power dissi pation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-22 http://www.Datasheet4U.com .
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