2SC3235. C3235 Datasheet


C3235 2SC3235. Datasheet pdf. Equivalent


C3235


2SC3235
SavantIC Semiconductor
www.DataSheet4U.com

Product Specification

Silicon NPN Power Transistors

2SC3235

DESCRIPTION ·With TO-220 package ·High voltage,high speed ·Low saturation voltage APPLICATIONS ·For high voltage ,high speed and high power switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION

Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 2 4 20 150 -55~150 UNIT V V V A A W

SavantIC Semiconductor
www.DataSheet4U.com

Product Specification

Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA; IB=0 IC=1mA; IE=0 IE=1mA; IC=0 IC=1A; IB=0.2 A IC=1A; IB=0.2 A VCB=400V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V 20 MIN 400 500 7

2SC3235

SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE

TYP.

MAX

UNIT V V V

1.0 1.5 10 10 50

V V µA µA

2

SavantIC Semic...



C3235
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220 package
·High voltage,high speed
·Low saturation voltage
APPLICATIONS
·For high voltage ,high speed and
high power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC3235
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
500
400
7
2
4
20
150
-55~150
UNIT
V
V
V
A
A
W

C3235
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2 A
VBEsat Base-emitter saturation voltage
IC=1A; IB=0.2 A
ICBO Collector cut-off current
VCB=400V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain
IC=0.1A ; VCE=5V
Product Specification
2SC3235
MIN TYP. MAX UNIT
400 V
500 V
7V
1.0 V
1.5 V
10 µA
10 µA
20 50
2




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)