C3231 2SC3231 Datasheet

C3231 Datasheet, PDF, Equivalent


Part Number

C3231

Description

2SC3231

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download C3231 Datasheet


C3231
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220 package
·Wide area of safe operation
APPLICATIONS
·Switching regulators
·General purpose power amplifiers
·TV horizontal output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC3231
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
Open emitter
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current (DC)
PC Collector power dissipation TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
200
150
7
4
40
150
-55~150
UNIT
V
V
V
A
W

C3231
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4A
ICBO Collector cut-off current
VCB=200V;IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE DC current gain
IC=1A ; VCE=5V
fT Transition frequency
IC=0.5A ; VCE=5V
Product Specification
2SC3231
MIN TYP. MAX UNIT
150 V
200 V
7V
1.0 V
100 µA
100 µA
30 150
8 MHz
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC3231 DESCRIPTION ·With TO-220 package ·Wide area of s afe operation APPLICATIONS ·Switching regulators ·General purpose power ampl ifiers ·TV horizontal output applicati ons PINNING PIN 1 2 3 Base Collector;co nnected to mounting base Emitter DESCRI PTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg P ARAMETER Collector-base voltage Collect or-emitter voltage Emitter-base voltage Collector current (DC) Collector power dissipation Junction temperature Stora ge temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 20 0 150 7 4 40 150 -55~150 UNIT V V V A W SavantIC Semiconductor www.DataSheet4 U.com Product Specification Silicon N PN Power Transistors CHARACTERISTICS Tj =25 unless otherwise specified PARAMETE R Collector-emitter breakdown voltage C ollector-base breakdown voltage Emitter -base breakdown voltage Collector-emitter saturation voltage Collect.
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