N-CHANNEL MOSFET. M2N60S Datasheet


M2N60S MOSFET. Datasheet pdf. Equivalent


M2N60S


N-CHANNEL MOSFET
...



M2N60S
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1 ≳䘧๲ᔎൟഎᬜᑨ᱊ԧㅵ
N-CHANNEL MOSFET
M2N60V/R/S/B/C/F
Џ㽕 খ᭄MAIN C HARACTERISTICS

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⫼䗨
z 乥ᓔ݇⬉⑤
z ᄤ䬛⌕఼
z UPS ⬉⑤


APPLICATIONS
z High ef ficiency switch
mode power supplies
z Electronic la mp ballast s
based on half bridge
z UPS
ѻક⡍ᗻ
zԢᷙᵕ⬉㥋
z
z
ᓔԢ݇Crss (݌ᑺൟᖿؐ
7.6pF)
zѻકܼ䚼㒣䖛䲾ዽ⌟䆩
zdv/dt 㛑࡯
z RoHSѻક

FEATURES
zLow gate charge
z LowCrss (typical 7.6pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
z RoHSproduct










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M2N60S
Ѯᖂ⬉ᄤ
1 ≳䘧๲ᔎൟഎᬜᑨ᱊ԧㅵ
N-CHANNEL MOSFET
㒱ᇍ᳔໻乱ᅮؐABSOLUTE RATINGS(Tc=25ć)
乍Ⳃ
Parameter
ヺো
Symbol
᭄ ؐ Value
JCS2N60V/R JCS2N60S/B/C
᳔催ⓣᵕˉ⑤ᵕⳈ⌕⬉य़
Drain-Source Voltage
VDSS
600 V
䖲㓁ⓣᵕ⬉⌕
Drain Current-continuous
ID
T=25ć
T=100ć
1.9
1.1 1.3
2.0
᳔໻㛝ކⓣᵕ⬉⌕˄⊼ 1˅
Drain Current – pulse
˄note 1˅
IDM
6.0 6.0*
᳔催ᷙ⑤⬉य़
Gate-Source Voltage
VGSS
±30 V
ऩ㛝ކ䲾ዽ㛑䞣˄⊼ 2˅
Single Pulsed Avalanche
Energy˄note 2˅
EAS
120 mJ
䲾ዽ⬉⌕˄⊼ 1˅
Avalanche Curren˄t note 1˅ IAR
1.8 2.0
䞡໡䲾ዽ㛑䞣˄⊼ 1˅
Repetitive Avalanche
Current ˄note 1˅
EAR
4.4 5.4
Ѡᵕㅵড৥ᘶ໡᳔໻⬉य़ব
࣪䗳⥛˄⊼ 3˅
Peak Diode Recovery
dv/dt 5.5
dv/dt ˄note 3˅
㗫ᬷࡳ⥛
Power Dissipation
PD
TC=25ć
-Derate
above
44
0.35 0.43
54
25ć
᳔催㒧⏽ঞᄬټ⏽ᑺ
Operating and Storage
Temperature Range
TJˈTSTG
-55̚+150
ᓩ㒓᳔催⛞᥹⏽ᑺ
Maximum Lead
Temperature for Soldering TL
300
Purposes
*ⓣᵕ⬉⌕⬅᳔催㒧⏽䰤ࠊ
*Drain current limited by maximum junction temperature


JCS2N60F
ԡ
Unit
2.0* A
1.3* A
A
2.0 A
5.4 mJ
V/ns
23
0.18
W
W/ć
ć
ć
໽⋹Ѯᖂ⬉ᄤᴤ᭭⾥ᡔ᳝䰤݀  োഄഔ˖໽⋹Ꮦ㒣⌢ᡔᴃᓔথऎ㄀ಯ໻㸫Ⳍᅝ䏃
1R;LDQJDQ5RDG7('$7LDQMLQ&KLQD$''˖7LDQMLQ0LFUR(OHFWURQLF0DWHULDO7HFKQRORJ\&R/WG
7(/˖  )$;˖  




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