POWER MOSFET. FS2KM-12A Datasheet


FS2KM-12A MOSFET. Datasheet pdf. Equivalent


Part Number

FS2KM-12A

Description

N-channel POWER MOSFET

Manufacture

Mitsubishi Electric Semiconductor

Total Page 4 Pages
Datasheet
Download FS2KM-12A Datasheet


FS2KM-12A
FS2KM-12A
MITMSIUTBSIUSBHIISNHcIhNPchOWPOEWR EMROMSFOESTFET
FS2KFMS2-K1M2-A12A
HIGHHI-GSHP-ESEPDEESDWSITWCIHTICNHGINUGSEUSE
OUTLINE DRAWING
10 ± 0.3
Dimensions in mm
2.8 ± 0.2
φ 3.2 ± 0.2
2.54 ± 0.25
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.25
0.75 ± 0.15
➀➁ ➂
G 10V DRIVE
G VDSS ............................................................................... 600V
G rDS (ON) (MAX) ................................................................ 6.4
G ID ........................................................................................... 2A
GATE
DRAIN
SOURCE
TO-220FN
APPLICATION
SMPS, AC-adapter, Power supply of Pr inter, Copier, TV, VCR. etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
PD
Tch
Tstg
Viso
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
VGS = 0V
VDS = 0V
L = 200µH
Conditions
AC for 1minute, Terminal to case
Typical value
Ratings
600
±30
2
6
2
25
–55 ~ +150
–55 ~ +150
2000
2.0
Unit
V
V
A
A
A
W
°C
°C
V
g
Sep. 2001
http://www.Datasheet4U.com

FS2KM-12A
MITSUBISHI Nch POWER MOSFET
FS2KM-12A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IGS = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 600V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 1A, VGS = 10V
ID = 1A, VGS = 10V
ID = 1A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 1A, VGS = 10V, RGEN = RGS = 50
IS = 1A, VGS = 0V
Channel to case
Limits
Unit
Min. Typ. Max.
600
V
±30
V
— — ±10 µA
— — 1 mA
2.5 3.0 3.5 V
5.0 6.4
5.0 6.4 V
1.2 2.0 S
280 pF
30 pF
7 pF
10 ns
10 ns
45 ns
25 ns
1.5 2.0 V
— — 5.00 °C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
40
32
24
16
8
0
0 50 100 150 200
CASE TEMPERATURE TC (°C)
MAXIMUM SAFE OPERATING AREA
7
5
3 tw =
2 10µs
100
7
5
3
2
101
7
5
3
2
TC = 25°C
Single Pulse
100µs
1ms
10
ms
DC
102
7
5
3
2
2
35
7101 23 35
7102 2
57
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
5
TC = 25°C
Pulse Test
4
VGS = 20V,10V,6V
3
5V
2
PD = 25W
1
4V
0
0 102 03 04 05 0
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
2.0
VGS = 20V,10V,6V,5V
1.6
1.2 PD = 25W
0.8
TC = 25°C
Pulse Test
0.4
4V
0
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
Sep. 2001


Features MITSUBISHI Nch POWER MOSFET MITSUBISHI N ch POWER MOSFET FS2KM-12A FS2KM-12A HI GH-SPEED SWITCHING USE HIGH-SPEED SWITC HING USE FS2KM-12A OUTLINE DRAWING 10 ± 0.3 Dimensions in mm 2.8 ± 0.2 1 5 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 6.5 ± 0.3 3 ± 0.3 0.75 ± 0.1 5 2.54 ± 0.25 2.54 ± 0.25 ➀➁ ➁ 2.6 ± 0.2 G 10V DRIVE G VDSS . ....................................... ....................................... 600V G rDS (ON) (MAX) ................ ....................................... ......... 6.4Ω G ID ................. ....................................... ................................... 2A ➀ ➀ GATE ➁ DRAIN ➂ SOURCE ➂ TO-220FN APPLICATION SMPS, AC-adapte r, Power supply of Pr inter, Copier, TV , VCR. etc. MAXIMUM RATINGS Symbol VDS S VGSS ID IDM IDA PD Tch Tstg Viso — (Tc = 25° C) Parameter Drain-source voltage Gate-source voltage Drain curre nt Drain current (Pulsed) Avalanche current (Pulsed) Maximum power dissipation Channel temperature Sto.
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