D5075 2SD5075 Datasheet

D5075 Datasheet, PDF, Equivalent


Part Number

D5075

Description

2SD5075

Manufacture

Savantic

Total Page 3 Pages
Datasheet
Download D5075 Datasheet


D5075
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD5075
DESCRIPTION
www.data·sWheietht4uT.cOom-3PML package
·High breakdown voltage
·High speed switching
APPLICATIONS
·Color TV horizontal output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
IC Collector current
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
800
6
3.5
10
50
150
-55~150
UNIT
V
V
V
A
A
W

D5075
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD5075
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=2.5A;IB=0.8A
VBEsat
Base-emitter saturation voltage
IC=2.5A;IB=0.8A
IEBO Emitter cut-off current
VEB=5V; IC=0
ICBO Collector cut-off current
VCB=800V; IE=0
hFE DC current gain
fT Transition frequency
tf Fall time
IC=0.5 A ; VCE=5V
IC=0.5 A ; VCE=10V
IC=3A;IB1=0.8A;IB2=-1.6A
VCC=200V;RL=66.7=
MIN TYP. MAX UNIT
8.0 V
1.5 V
1.0 mA
10 µA
8
3 MHz
0.4 µs
2


Features SavantIC Semiconductor Product Specific ation Silicon NPN Power Transistors 2 SD5075 www.datasheet4u.com DESCRIPTIO N ·With TO-3PML package ·High breakdo wn voltage ·High speed switching APPLI CATIONS ·Color TV horizontal output ap plications PINNING PIN 1 2 3 Base Colle ctor Emitter Fig.1 simplified outline ( TO-3PML) and symbol DESCRIPTION Absolu te maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER C ollector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collect or power dissipation Junction temperatu re Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 3.5 10 50 150 -55~150 UNIT V V V A A W SavantIC Semiconducto r Product Specification Silicon NPN P ower Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Co llector-emitter saturation voltage Base -emitter saturation voltage Emitter cut -off current Collector cut-off current DC current gain Transition f.
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