Document
SDS10F150S
FEATURES
* High Voltage and High Reliability * High Speed Switching (Trr=135ns) * Low VF in Turn on (VF=1.3V at IF=10A) * Suitable for Damper Diode in Horizontal Deflection Circuits
POWER RECTIFIER
TO-220F
1 2
MECHANICAL CHARACTERISTICS
* Case: Epoxi, Molded * Easy to Mount on Circuit Board * Shipped 50units per Plastic Tube * Marking: D10F150S
2 1
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Average Rectified Forward Current, TC=125°C Nonrepetetive Peak Surge Current (Halfwave, Single Phase, 60Hz) Operating Junction and Storage Temperature Controlled Avalanche Energy TJ, TSTG WAVAL -65 ~ 125 20 °C mJ Symbol VRRM IF(AV) IFSM Value 1500 10 100 Units V A A
THERMAL CHARACTERISTICS
Thermal Resistance- Junction to Case RθJC 5.0 °C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
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SDS10F150S
ELECTRICAL CHARACTERISTICS
Characteristics Maximum Instantaneous Forward Voltage (1) (IF = 10A, TJ = 125 °C) (IF = 10A, TJ = 25 °C) Maximum Instantaneous Reverse Current (1) (Rated DC Voltage, TJ = 125 °C) (Rated DC Voltage, TJ = 25 °C) Maximum Reverse Recovery Time (IF = 1.0A, di/dt = 50A/µs) Maximum Forward Recovery Time (IF = 6.5A, di/dt = 50A/µs) Maximum Forward Recovery Voltage (1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%
POWER RECTIFIER
Symbol VF
Typ
Max
Units
1.1 1.3 IR 8 1 trr 135 tfr 150 VFRM 10 250 14 170 80 10 1.6
V
µA
ns
ns V
SDS10F150S
100
POWER RECTIFIER
1 0 0 0
I R, REVERSE CURRENT [uA]
1 0 0
1 0 T j =1 2 5 ¡É 1 1 0 0 ¡É 0 .1 2 5¡É
IF, INSTANTANEOUS FORWARD CURRENT [AMPS]
10
0 .0 1
T j=125¡É
0 .0 0 1 0 .0
3 0 0 .0
6 0 0 .0
9 0 0 .0
1 .2k
1 .5k
V ,R E V E R S E V O L T A G E [V O L T S ] R
Figure 2. Typical Reverse Current
25¡ É 300 TYPICALCAPACITANCEAT 0V=150pF
1
0.1 0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Cj , CAPACITANCE [pF]
200
100
0.1
VF, IN S T ANTANEOUSVOLTAGE [VOLTS]
1 10 VR,REVERSEVOLTAGE [VOLTS]
100
Figure 1. Typical Forward Voltage
Figure 3. Typical Capacitance
SDS10F150S
300
POWER RECTIFIER
270
Trr, REVERSE RECOVERY TIME [ns]
240
di/dt =50A/us
210
180
150
100A/us
120
90
60 0 1 2 3 4 5 6 7 8 9 10 IF, FO R W A R DC U R R E N T [A M P S ]
Figure 4. Typical Reverse Recovery Time
2000
Qrr, STORED RECOVERY CHARGE [nC]
1500 di/dt = 100A/us
1000 50A/us
500
0 0 1 2 3 4 5 6 7 8 9 10 IF, FORWARDCURRENT [A M P S ]
Figure 5. Typical Stored Recovery Charge
SDS10F150S
PACKAGE DIMENSION
POWER RECTIFIER
Unit : mm
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™
DISCLAIMER
ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUN.