POWER RECTIFIER. SDS10F150S Datasheet


SDS10F150S RECTIFIER. Datasheet pdf. Equivalent


Part Number

SDS10F150S

Description

POWER RECTIFIER

Manufacture

Fairchild Semiconductor

Total Page 6 Pages
Datasheet
Download SDS10F150S Datasheet


SDS10F150S
SDS10F150S
FEATURES
* High Voltage and High Reliability
* High Speed Switching (Trr=135ns)
* Low VF in Turn on (VF=1.3V at IF=10A)
* Suitable for Damper Diode in Horizontal
Deflection Circuits
MECHANICAL CHARACTERISTICS
* Case: Epoxi, Molded
* Easy to Mount on Circuit Board
* Shipped 50units per Plastic Tube
* Marking: D10F150S
POWER RECTIFIER
TO-220F
1
2
2
1
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Average Rectified Forward Current, TC=125°C
Nonrepetetive Peak Surge Current
(Halfwave, Single Phase, 60Hz)
Operating Junction and Storage Temperature
Controlled Avalanche Energy
THERMAL CHARACTERISTICS
Thermal Resistance- Junction to Case
Symbol
VRRM
IF(AV)
IFSM
Value
1500
10
100
Units
V
A
A
TJ, TSTG
WAVAL
-65 ~ 125
20
°C
mJ
RθJC
5.0 °C/W
©1999 Fairchild Semiconductor Corporation
Rev. B
http://www.Datasheet4U.com

SDS10F150S
SDS10F150S
ELECTRICAL CHARACTERISTICS
POWER RECTIFIER
Characteristics
Symbol Typ Max Units
Maximum Instantaneous Forward Voltage (1)
(IF = 10A, TJ = 125 °C)
(IF = 10A, TJ = 25 °C)
Maximum Instantaneous Reverse Current (1)
(Rated DC Voltage, TJ = 125 °C)
(Rated DC Voltage, TJ = 25 °C)
Maximum Reverse Recovery Time
(IF = 1.0A, di/dt = 50A/µs)
Maximum Forward Recovery Time
(IF = 6.5A, di/dt = 50A/µs)
Maximum Forward Recovery Voltage
VF
IR
trr
tfr
VFRM
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%
1.1 V
1.3 1.6
8 80 µA
1 10
135 170 ns
150 250 ns
10 14 V


Features SDS10F150S FEATURES * High Voltage and H igh Reliability * High Speed Switching (Trr=135ns) * Low VF in Turn on (VF=1.3 V at IF=10A) * Suitable for Damper Diod e in Horizontal Deflection Circuits PO WER RECTIFIER TO-220F 1 2 MECHANICAL CHARACTERISTICS * Case: Epoxi, Molded * Easy to Mount on Circuit Board * Shipp ed 50units per Plastic Tube * Marking: D10F150S 2 1 MAXIMUM RATINGS Rating Pe ak Repetitive Reverse Voltage Average R ectified Forward Current, TC=125°C Non repetetive Peak Surge Current (Halfwave , Single Phase, 60Hz) Operating Junctio n and Storage Temperature Controlled Av alanche Energy TJ, TSTG WAVAL -65 ~ 125 20 °C mJ Symbol VRRM IF(AV) IFSM Valu e 1500 10 100 Units V A A THERMAL CHAR ACTERISTICS Thermal Resistance- Junctio n to Case RθJC 5.0 °C/W Rev. B ©19 99 Fairchild Semiconductor Corporation http://www.Datasheet4U.com SDS10F150S ELECTRICAL CHARACTERISTICS Characterist ics Maximum Instantaneous Forward Volta ge (1) (IF = 10A, TJ = 125 °C) (IF = 10A, TJ = 25 °C) Maximum Instan.
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