SST26VF016BA Flash Memory Datasheet

SST26VF016BA Datasheet, PDF, Equivalent


Part Number

SST26VF016BA

Description

3.0V 16 Mbit Serial Quad I/O (SQI) Flash Memory

Manufacture

Microchip

Total Page 30 Pages
Datasheet
Download SST26VF016BA Datasheet


SST26VF016BA
SST26VF016B / SST26VF016BA
3.0V 16 Mbit Serial Quad I/O (SQI) Flash Memory
Features
• Single Voltage Read and Write Operations
- 2.7-3.6V
• Serial Interface Architecture
- Nibble-wide multiplexed I/O’s with SPI-like serial
command structure
- Mode 0 and Mode 3
- x1/x2/x4 Serial Peripheral Interface (SPI) Protocol
• High Speed Clock Frequency
- 104 MHz max
• Burst Modes
- Continuous linear burst
- 8/16/32/64 Byte linear burst with wrap-around
• Superior Reliability
- Endurance: 100,000 Cycles (min)
- Greater than 100 years Data Retention
• Low Power Consumption:
- Active Read current: 15 mA (typical @ 104 MHz)
- Standby Current: 15 μA (typical)
• Fast Erase Time
- Sector/Block Erase: 18 ms (typ), 25 ms (max)
- Chip Erase: 35 ms (typ), 50 ms (max)
• Page-Program
- 256 Bytes per page in x1 or x4 mode
• End-of-Write Detection
- Software polling the BUSY bit in status register
• Flexible Erase Capability
- Uniform 4 KByte sectors
- Four 8 KByte top and bottom parameter overlay
blocks
- One 32 KByte top and bottom overlay blocks
- Uniform 64 KByte overlay blocks
• Write-Suspend
- Suspend Program or Erase operation to access
another block/sector
• Software Reset (RST) mode
• Software Write Protection
- Individual-Block Write Protection with permanent
lock-down capability
- 64 KByte blocks, two 32 KByte blocks, and
eight 8 KByte parameter blocks
- Read Protection on top and bottom 8 KByte
parameter blocks
• Security ID
- One-Time Programmable (OTP) 2 KByte,
Secure ID
- 64 bit unique, factory pre-programmed
identifier
- User-programmable area
• Temperature Range
- Industrial: -40°C to +85°C
• Packages Available
- 8-contact WDFN (6mm x 5mm)
- 8-lead SOIJ (208mil)
- 8-lead SOIC (150 mil)
• All devices are RoHS compliant
Product Description
The Serial Quad I/O™ (SQI™) family of flash-memory
devices features a six-wire, 4-bit I/O interface that
allows for low-power, high-performance operation in a
low pin-count package. SST26VF016B/016BA also
support full command-set compatibility to traditional
Serial Peripheral Interface (SPI) protocol. System
designs using SQI flash devices occupy less board
space and ultimately lower system costs.
All members of the 26 Series, SQI family are manufac-
tured with proprietary, high-performance CMOS Super-
Flash® technology. The split-gate cell design and thick-
oxide tunneling injector attain better reliability and man-
ufacturability compared with alternate approaches.
The SST26VF016B/016BA significantly improve per-
formance and reliability , while lowering power con-
sumption. These devices write (Program or Erase) with
a single power supply of 2.7-3.6V . The total energy
consumed is a function of the applied voltage, current,
and time of application. Since for any given voltage
range, the SuperFlash technology uses less current to
program and has a shorter erase time, the total energy
consumed during any Erase or Program operation is
less than alternative flash memory technologies.
SST26VF016B/016BA are offered in 8-contact WDFN
(6 mm x 5 mm), 8-lead SOIJ (208 mil), and 8-lead
SOIC (150 mil). See Figures 2-1 through 2-3 for pin
assignments.
Two configurations are available upon order:
SST26VF016B default at power-up has the WP# and
Hold# pins enabled and SST26VF016BA default at
power-up has the WP# and Hold# pins disabled.
2014 Microchip Technology Inc.
Advance Information
DS20005262A-page 1
http://www.Datasheet4U.com

SST26VF016BA
SST26VF016B / SST26VF016BA
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DS20005262A-page 2
Advance Information
2014 Microchip Technology Inc.


Features SST26VF016B / SST26VF016BA 3.0V 16 Mbit Serial Quad I/O (SQI) Flash Memory Feat ures • Single Voltage Read and Write Operations - 2.7-3.6V • Serial Interf ace Architecture - Nibble-wide multiple xed I/O’s with SPI-like serial comman d structure - Mode 0 and Mode 3 - x1/x2 /x4 Serial Peripheral Interface (SPI) P rotocol • High Speed Clock Frequency - 104 MHz max • Burst Modes - Continu ous linear burst - 8/16/32/64 Byte line ar burst with wrap-around • Superior Reliability - Endurance: 100,000 Cycles (min) - Greater than 100 years Data Re tention • Low Power Consumption: - Ac tive Read current: 15 mA (typical @ 104 MHz) - Standby Current: 15 μA (typica l) • Fast Erase Time - Sector/Block E rase: 18 ms (typ), 25 ms (max) - Chip E rase: 35 ms (typ), 50 ms (max) • Page -Program - 256 Bytes per page in x1 or x4 mode • End-of-Write Detection - So ftware polling the BUSY bit in status r egister • Flexible Erase Capability - Uniform 4 KByte sectors - Four 8 KByte top and bottom parameter overlay blocks - One .
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