AP4407GM-HF-3 Power MOSFET Datasheet

AP4407GM-HF-3 Datasheet, PDF, Equivalent


Part Number

AP4407GM-HF-3

Description

P-channel Enhancement-mode Power MOSFET

Manufacture

Advanced Power Electronics

Total Page 5 Pages
Datasheet
Download AP4407GM-HF-3 Datasheet


AP4407GM-HF-3
Advanced Power
Electronics Corp.
AP4407GM-HF-3
P-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
D
Low On-resistance
BV DSS
-30V
Fast Switching Performance
RDS(ON)
14m
RoHS-compliant, halogen-free
G
ID -10.7A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP4407GM-HF-3 is in the SO-8 package, which is widely used
for commercial and industrial surface-mount applications, and is well
suited for low voltage applications such as DC/DC converters.
D
D
D
D
SO-8 (M)
G
SS
S
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TA=25°C
ID at TA= 70°C
IDM
PD at TA=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Rating
-30
±25
- 10.7
-8.6
-50
2.5
0.02
-55 to 150
-55 to 150
Value
25
50
Units
V
V
A
A
A
W
W/°C
°C
°C
Unit
°C/W
°C/W
Ordering Information
AP4407GM-HF-3TR : in RoHS-compliant halogen-free SO-8, shipped on tape and reel (3000 pcs/reel)
©2012 Advanced Power Electronics Corp. USA
www.a-powerusa.com
201207252-3 1/5
http://www.Datasheet4U.com

AP4407GM-HF-3
Advanced Power
Electronics Corp.
AP4407GM-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol
BVDSS
BV DSS/Tj
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-10A
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=-4.5V, ID=-5A
VDS=VGS, ID=-250uA
VDS=-10V, ID=-10A
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
VGS = ±25V
ID=-10A
VDS=-24V
VGS=-4.5V
VDS=-15V
ID=-1A
RG=6.8Ω, VGS=-10V
RD=15
VGS=0V
VDS=-25V
f=1.0MHz
Min. Typ. Max. Units
-30 - - V
- -0.015 - V/°C
- - 14 m
- - 25 m
-1.0 - -3.0 V
- 13 - S
- - -1 uA
- - -25 uA
- - ±100 nA
- 28 45 nC
- 5.2 - nC
- 19.8 - nC
- 12 - ns
- 11 - ns
- 97 - ns
- 72 - ns
- 1960 3200 pF
- 590 - pF
- 465 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=-2.0A, VGS=0V
IS=-10A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 36 - ns
- 34 - nC
Notes:
1.Pulse width limited by maximum junction temperature.
2.Pulse test - pulse width < 300µs , duty cycle < 2%
3.Surface mounted on 1 in2 copper pad of FR4 board; 125°C/W on minimum copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
©2012 Advanced Power Electronics Corp. USA
www.a-powerusa.com
2/5


Features Advanced Power Electronics Corp. AP4407 GM-HF-3 P-channel Enhancement-mode Pow er MOSFET Simple Drive Requirement Low On-resistance Fast Switching Performanc e RoHS-compliant, halogen-free D BV D SS RDS(ON) G S -30V 14mΩ -10.7A ID Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, lo w on-resistance and cost-effectiveness. The AP4407GM-HF-3 is in the SO-8 packa ge, which is widely used for commercial and industrial surface-mount applicati ons, and is well suited for low voltage applications such as DC/DC converters. D D D G SO-8 (M) S S S Absolute M aximum Ratings Symbol VDS VGS ID at TA= 25°C ID at TA= 70°C IDM PD at TA=25° C TSTG TJ Parameter Drain-Source Voltag e Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 ±25 1 0.7 -8.6 - 50 2.5 0.02 -55 to 150 -55 t o 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Rang.
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